Results 81 to 90 of about 126 (126)

Model‐Based Time‐Modulated Write Algorithm for 1R Analog Memristive Crossbar Arrays

Advanced Electronic Materials, EarlyView.
A novel model‐based time‐modulated write algorithm efficiently programs analog 1R memristive crossbar arrays by varying pulse duration at a fixed voltage. By leveraging a physics‐based compact model and a dynamic gain mechanism, this approach overcomes device nonlinearities and parasitic effects.
Richard Schroedter, Ahmet Samil Demirkol, Ioannis Messaris, Christian Bruchatz, Eter Mgeladze, Stefan Slesazeck, Thomas Mikolajick, Ronald Tetzlaff   +7 more
wiley   +1 more source

Virulence of Entomopathogenic Fungi Metarhizium anisopliae and Paecilomyces fumosoroseus for the Microbial Control of Spodoptera exigua. [PDF]

Mycobiology, 2014
Han JH, Jin BR, Kim JJ, Lee SY.
europepmc   +1 more source

Environmental Effects on RRAM Cells Based on 2D Halide Perovskite Materials

Advanced Electronic Materials, EarlyView.
RRAM offers high speed, scalability, and low power, positioning it as a next‐generation non‐volatile memory. Two‐dimensional halide perovskites show promise due to tunable optoelectronic properties and flexible processing but suffer from environmental sensitivity. This review examines degradation from humidity, temperature, light, and strain, discusses
Mojtaba Joodaki, Babitha Arun, Hartmut Hillmer, Chih‐Chieh Hsu   +3 more
wiley   +1 more source

Quantum++: A modern C++ quantum computing library. [PDF]

PLoS One, 2018
Gheorghiu V.
europepmc   +1 more source

A Dual‐Branch Flux‐Based Extended Memristor Model With Machine‐Learning‐Assisted Calibration

Advanced Electronic Materials, EarlyView.
Multilayer oxide memristors integrated in crossbar arrays are described through a dual‐branch, flux‐controlled compact model. A three‐stage calibration workflow combining Latin hypercube sampling, Bayesian optimization, and gradient‐based refinement extracts device parameters from experimental data.
Davide Rossetti, K. Nikiruy, A.S. Demirkol, Alon Ascoli, M. Ziegler, R. Tetzlaff, Fernando Corinto   +6 more
wiley   +1 more source

One-stage parametric meta-analysis of time-to-event outcomes. [PDF]

Stat Med, 2010
Siannis F, Barrett JK, Farewell VT, Tierney JF.   +3 more
europepmc   +1 more source

Effects of Doping, Disorder, and Compensation on Electron Conduction in Si‐Doped k‐Ga2O3 Close to the Metal‐to‐Insulator Transition

Advanced Electronic Materials, EarlyView.
Self‐compensation effects attributed to doping‐dependent shift‐defects at APBs Validation of Hall data for VRH transport near the MIT Persistence of VRH transport for any SiH4 flow in Si‐doped κ‐Ga2O3 due to high compensation coupling transport and EPR data as strategy to study electronic properties and doping T‐dependence of transport data agrees with
Antonella Parisini, Hans Jürgen von Bardeleben, Ildicò Cora, Zsolt Fogarassy, Paola Alippi, Vincenzo Fiorentini, Ian Vickridge, Piero Mazzolini, Alessio Bosio, Roberto Fornari   +9 more
wiley   +1 more source

Challenges of Big Data Analysis. [PDF]

Natl Sci Rev, 2014
Fan J, Han F, Liu H.
europepmc   +1 more source

Amorphous Tungsten Driving Extraordinary Long‐Range Interlayer Exchange Coupling and Large Spin‐Orbit Torque

Advanced Electronic Materials, EarlyView.
The amorphous tungsten (W) is found to be a promising non‐magnetic interlayer simultaneously driving the long‐range interlayer exchange coupling and the large spin Hall effect in a synthetic antiferromagnet (SyAF). Thanks to these characteristics, efficient spin‐orbit torque switching is achieved in the SyAF.
Xueyao Hou, Keita Ito, Varun K. Kushwaha, Takumi Yamazaki, Junwei Gu, Zhenchao Wen, Keisuke Masuda, Jun Okabayashi, Shoya Sakamoto, Takeshi Seki   +9 more
wiley   +1 more source

Anderson-Darling and Watson tests for the geometric distribution with estimated probability of success. [PDF]

PLoS One
Coronel-Brizio HF, Hernández-Montoya AR, Rodríguez-Achach ME, Tapia-McClung H, Trinidad-Segovia JE.   +4 more
europepmc   +1 more source