Results 81 to 90 of about 1,679,460 (184)

Roll‐to‐Roll Mechanical Exfoliation for Large‐Area van der Waals Films with Preserved Crystallographic Alignment

open access: yesAdvanced Functional Materials, EarlyView.
A roll‐to‐roll exfoliation method is demonstrated that preserves the crystallographic alignment of anisotropic 2D materials over large areas, enabling scalable fabrication of directional electronic and optoelectronic devices. Abstract Anisotropic 2D materials such as black phosphorus (BP), GeS or CrSBr, exhibit direction‐dependent optical and ...
Esteban Zamora‐Amo   +14 more
wiley   +1 more source

Domain‐Wall‐Free Sliding Ferroelectricity in Fully Commensurate 3R Transition Metal Dichalcogenide Bilayers

open access: yesAdvanced Functional Materials, EarlyView.
It is reported that the ferroelectric switching behavior of rhombohedral (3R) phase transition metal dichalcogenide (TMD) bilayers strongly depends on their domain structures. Single‐domain TMDs (SD‐TMDs) with domain‐wall‐free structures exhibit robust and stable polarization switching, whereas poly‐domain TMDs (PD‐TMDs) with randomly distributed ...
Ji‐Hwan Baek   +8 more
wiley   +1 more source

Initial validation of the LSPain scale: a behaviour-based clinical tool for canine lumbosacral pain. [PDF]

open access: yesFront Vet Sci
Medina-Serra R   +6 more
europepmc   +1 more source

‘Oxygen Bound to Magnesium’ as High Voltage Redox Center Causes Sloping of the Potential Profile in Mg‐Doped Layered Oxides for Na‐Ion Batteries

open access: yesAdvanced Functional Materials, EarlyView.
Na‐ion batteries ‐ Impact of doping on the oxygen redox: The sloping potential of NaMg0.1Ni0.4Mn0.5O2 above 4.0 V is caused by a new redox center (arising from the ‘O bound to Mg’), having a higher potential but being more irreversible compared to the ‘O bound to Ni’.
Yongchun Li   +12 more
wiley   +1 more source

Universal Neuromorphic Element: NbOx Memristor with Co‐Existing Volatile, Non‐Volatile, and Threshold Switching

open access: yesAdvanced Functional Materials, EarlyView.
A W/NbOx/Pt memristor demonstrates the coexistence of volatile, non‐volatile, and threshold switching characteristics. Volatile switching serves as a reservoir computing layer, providing dynamic short‐term processing. Non‐volatile switching, stabilized through ISPVA, improves reliable long‐term readout. Threshold switching operates as a leaky integrate
Ungbin Byun, Hyesung Na, Sungjun Kim
wiley   +1 more source

A Van der Waals Optoelectronic Synapse with Tunable Positive and Negative Post‐Synaptic Current for Highly Accurate Spiking Neural Networks

open access: yesAdvanced Functional Materials, EarlyView.
A van der Waals optoelectronic synaptic device based on a ReS2/WSe2 heterostructure and oxygen‐treated h‐BN is presented, which enables both positive and negative PSCs through photocarrier polarity reversal. Bidirectional plasticity arises from gate‐tunable band bending and charge trapping‐induced quasi‐doping.
Hyejin Yoon   +9 more
wiley   +1 more source

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