Results 111 to 120 of about 4,513 (147)

Spray‐Dried mRNA‐LNP Powder Enabling Multi‐Route Delivery With 3‐Year Refrigerated Stability

Advanced Science, EarlyView.
Spray‐dried mRNA‐LNP powder with trehalose matrix enables reconstitution for parenteral delivery or direct administration via pulmonary and sublingual routes, maintaining protein expression comparable to liquid controls. The thermostable powder preserves colloidal stability, mRNA integrity, and biological activity for over 3 years at 2°C–8°C, while ...
Ashish Sarode, Priyal Patel, Frank DeRosa, Shrirang Karve, Regis Gervier   +4 more
wiley   +1 more source

Информационен ÑиÑтем на МиниÑтерÑтвото за ÑтопанÑтво

, 2016
ИзваР...
ÐпоÑтолова, Мирјана
core  

A Compendium of Logic Gates Based on Reconfigurable Three‐Independent‐Gate Transistors Realized in FDSOI Hardware

Advanced Electronic Materials, EarlyView.
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez, Yuxuan He, Giulio Galderisi, Violetta Sessi, Niladri Bhattacharjee, Peter Baars, Kerstin Poenisch, Annekathrin Zeun, Konstantin Li, Fernando Koch, Binit Syamal, Thomas Mikolajick, Jens Trommer   +12 more
wiley   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

Целена пÑиходинамÑка пÑихотерапија во лекувањето на неврозата

, 2016
The patients were treated with the method of psychoanalysis. They represented symptoms of the convertible fobicle neurosis. The author was an observer of the therapy, and at the same time, he was an object of the supervision of psychotherapist.
Мицев (Micev), Миодраг (Miodrag), Димитријевиќ (Dimitrijevikj), З (Z)   +1 more
core  

Efficient In‐Hardware Matrix–Vector Multiplication and Addition Exploiting Bilinearity of Schottky Barrier Transistors Processed on Industrial FDSOI

Advanced Electronic Materials, EarlyView.
ABSTRACT Machine learning and Artificial Intelligence (AI) tasks have stretched traditional hardware to its limits. In‐hardware computation is a novel approach that aims to run complex operations, such as matrix–vector multiplication, directly at the device level for increased efficiency.
Juan P. Martinez, Niladri Bhattacharjee, Yuxuan He, Giulio Galderisi, Brojogopal Sapui, Sara Mannaa, Ian O'Connor, Violetta Sessi, Peter Javorka, Thomas Mikolajick, Jens Trommer   +10 more
wiley   +1 more source

Controlling Self‐Doping in Conjugated Polyelectrolyte Copolymers to Vary the Threshold Voltage in OECTs

Advanced Electronic Materials, EarlyView.
Two series of self‐doped conjugated polyelectrolytes are synthesized from a non‐self‐dopable building block 3MEEET and a self‐dopable building‐block 3HOT−[TMA+] or 3HOT−[SO3H] enabling precise control over the degree of self‐doping, which in turn directly governs the threshold voltage (VT) in OECTs over a wide range of 700 mV.
Julian Hungenberg, Andreas W. Erhardt, Adrian Hochgesang, John Mohanraj, Lys Sprenger, Sahar Salehi, Christopher R. McNeill, Mukundan Thelakkat   +7 more
wiley   +1 more source

Dual‐Defect‐Engineered Zinc Oxynitride Thin‐Film Transistors Enabling Electrostatic Current Balancing in Geometrically Symmetric Oxide Logic

Advanced Electronic Materials, EarlyView.
Dual‐defect engineering controls subgap states in zinc oxynitride (ZnON) thin‐film transistors, yielding a field‐effect mobility of 26.58 cm2 V−1 s−1. A process‐associated threshold‐voltage shift is repurposed within a dual‐gate depletion‐mode load to electrostatically balance current in a geometrically symmetric NMOS inverter.
Seung Min Lee, Dong Hyeon Kim, Ji Won Woo, Dong Beom Lee, Kye Yeong Jo, Joo Hyun Jeong, Yun Hyeok Jeong, Joon Hwang, Sang Jik Kwon, Eou‐Sik Cho, Min‐Kyu Park   +10 more
wiley   +1 more source

Cumulative‐Stress‐Resilient Microelectromechanical Switches for Extreme Environment Applications

Advanced Electronic Materials, EarlyView.
A microelectromechanical switch combines a thermomechanically stable suspended structure with radiation‐tolerant materials to preserve operation under cumulative shock (2900 g), vibration (2000 Hz), gamma irradiation (1 Mrad), extreme temperatures (4–450 K), and proton irradiation (100 MeV, 1012 p/cm2).
So‐Young Lee, Min‐Sub Kim, Tae‐Soo Kim, Young‐Woo Jo, Yu‐Hyun Shim, Se‐Yoon Jung, Sung‐Ho Kim, Do‐Hoon Lim, Yong‐Bok Lee, Jun‐Bo Yoon   +9 more
wiley   +1 more source

Simultaneous Electronic and Crystallographic Modulation of Cs3Bi2Br9 by Single‐Element Sn Substitution for Enhanced CO2 Photoreduction

Advanced Energy Materials, EarlyView.
Aliovalent B‐site substitution with Sn2+ in lead‐free perovskite, Cs3Bi2Br9, is employed to simultaneously induce lattice contraction and bromine vacancy through charge imbalance and ionic radius mismatch. The resulting structural distortion modulates the electronic structure and improves charge separation, leading to enhanced visible‐light‐driven CO2 ...
Justin Khor, Jiale Lee, Xin Ying Kong, Qixin Zhou, Yongfa Zhu, Jingxiang Low, Siang‐Piao Chai, Lling‐Lling Tan   +7 more
wiley   +1 more source