Results 151 to 160 of about 673 (204)

Axial Coordination Induced Electron Delocalization and p‐p Orbital Hybridization in Single‐Atom Catalysts Boosts Zn2+ Desolvation for Highly Stable Zn Anode

open access: yesAdvanced Science, EarlyView.
The F‐axial coordinated Sb SAs (F‐Sb SAs) can effectively reduce the desolvation energy of hydrated Zn2+ ions and greatly accelerate the migration kinetics of Zn2+ ions. The symmetric cell and Zn‐I2 batteries based on F‐Sb SAs@Zn anode exhibit outstanding stability.
Yan Dao   +6 more
wiley   +1 more source

Leveraging Reaction Heterogeneity in Bimodal Cathodes to Enhance Longevity of SiO/Graphite | NCM Full cells

open access: yesAdvanced Science, EarlyView.
A bimodal cathode composed of single‐ and polycrystalline NCM particles induces end‐of‐discharge overpotential rise via reaction heterogeneity, effectively regulating the depth of discharge of SiO in SiO/graphite anodes. This design suppresses mechanical degradation of SiO and enables long‐term cycling stability without compromising the energy density ...
Hyoyeong Kim   +10 more
wiley   +1 more source

Electric‐Fish‐Inspired Thin Hydrogel Electrocytes Achieve High Power Density and Environmental Robustness

open access: yesAdvanced Science, EarlyView.
This study presents thin, environmentally stable hydrogel power sources inspired by electric fish. Made using layer‐by‐layer spin‐coating with glycerol‐enhanced solutions, they offer precise layer control, long‐term hydration, and anti‐freezing stability.
Dor Tillinger   +4 more
wiley   +1 more source

ÐÑÑÑÐ°Ñ Ð¼Ð°ÑемаÑика. ÐиÑÑеÑенÑиалÑнÑе ÑÑавнениÑ

open access: green, 2017
Ксения Валерьевна Галунова   +1 more
openalex   +1 more source

Kвантитативно одредување на калпротектин во аÑцит кај пациенти Ñо Ñпонтан бактериÑки перитонитиÑ

open access: diamond, 2020
Фана Личоска-Јосифовиќ   +7 more
openalex   +2 more sources

XHEMTs on Ultrawide Bandgap Single‐Crystal AlN Substrates

open access: yesAdvanced Electronic Materials, EarlyView.
AlN/GaN/AlN XHEMTs [single‐crystal (“X‐tal”) high‐electron‐mobility transistors] are built on bulk AlN substrates with a 20 nm pseudomorphic GaN channel. This coherent epitaxial double heterostructure promises low‐defect, thermally efficient nitride electronics for next‐generation RF technology.
Eungkyun Kim   +6 more
wiley   +1 more source

Home - About - Disclaimer - Privacy