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Results 111 to 120 of about 4,891 (157)

, 2016
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Ð“Ñ€Ð½Ð°Ñ€Ð¾Ð², ÐÐºÑÐµÐ½Ñ‚Ð¸
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Molecularly Engineered Wing‐Shaped Azobenzene Memristors for Logic‐in‐Memory and Edge Visual Intelligence

Advanced Science, EarlyView.
Rational engineering of terminal substituents in symmetric azobenzene‐based molecules enables precise control over conformationally coupled charge‐transfer processes. This design yields tunable nonvolatile resistive memory behaviors, ranging from write‐once‐read‐many‐times (WORM) to rewritable switching.
Yanze Liu +11 more
wiley +1 more source

Preferential C-nociceptor stimulation facilitates peripheral axon reflex flare, but not secondary mechanical hyperalgesia. [PDF]

Front Pain Res (Lausanne)
Daneffel L +4 more
europepmc +1 more source

, 2017
The aim of this study was to evaluate the efficacy of using appropriate biomarkers of inflammation for diagnosis of tuberculosis in children, monitoring the disease and the effects of the applied therapy.Material and methods: In this study, 60 ...
ÐœÐ¸Ñ€Ñ‡ÐµÐ²ÑÐºÐ° (Mirchevska), Ð’Ð¸Ð¾Ð»ÐµÑ‚Ð° (Violeta)
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Thin‐Film Thermal Sensors on Chitosan Substrates for Sustainable Transient Electronics

Advanced Electronic Materials, EarlyView.
Fully transient thin‐film temperature sensors are realized on pure chitosan substrates using Mo‐based RTDs and a‐IGZO/Mo thermistors. The devices exhibit high sensitivity, mechanical flexibility, humidity‐aware operation, and complete dissolution in natural solvents.
Ahmed Rasheed +14 more
wiley +1 more source

Ð˜Ð¡Ð¥Ð ÐÐÐÐ¢Ð Ð˜ ÐˆÐÐ’ÐÐžÐ¢Ðž Ð—Ð”Ð ÐÐ’ÐˆÐ• – Ð¡ÐžÐ¡Ð¢ÐžÐˆÐ‘Ð, ÐŸÐžÐ›Ð˜Ð¢Ð˜ÐšÐ˜ Ð˜ ÐŸÐ Ð•Ð”Ð˜Ð—Ð’Ð˜Ð¦Ð˜

A Compendium of Logic Gates Based on Reconfigurable Three‐Independent‐Gate Transistors Realized in FDSOI Hardware

Advanced Electronic Materials, EarlyView.
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez +12 more
wiley +1 more source

Ð•Ð¤Ð•ÐšÐ¢Ð˜ ÐÐ CYP3A4 Ð“Ð•ÐÐ•Ð¢Ð¡ÐšÐ˜ ÐŸÐžÐ›Ð˜ÐœÐžÐ Ð¤Ð˜Ð—ÐÐœ Ð’Ð Ð— ÐŸÐžÐ¡Ð¢ÐžÐŸÐ•Ð ÐÐ¢Ð˜Ð’ÐÐÐ¢Ð ÐŸÐžÐ¢Ð ÐžÐ¨Ð£Ð’ÐÐ§ÐšÐ ÐÐ Ð¤Ð•ÐÐ¢ÐÐÐ˜Ð› ÐŸÐ Ð˜ Ð¢Ð Ð•Ð¢ÐœÐÐ ÐÐ ÐŸÐžÐ¡Ð¢ÐžÐŸÐ•Ð ÐÐ¢Ð˜Ð’ÐÐÐ¢Ð Ð‘ÐžÐ›ÐšÐ

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis +7 more
wiley +1 more source

, 2016
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Ð¸Ð½Ñ„Ð¾Ñ€Ð¼Ð°Ñ‚Ð¸ÐºÐ°, ÐœÐ•Ð”Ð˜Ð¡ -
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