Results 121 to 130 of about 381 (169)
XHEMTs on Ultrawide Bandgap Single‐Crystal AlN Substrates
AlN/GaN/AlN XHEMTs [single‐crystal (“X‐tal”) high‐electron‐mobility transistors] are built on bulk AlN substrates with a 20 nm pseudomorphic GaN channel. This coherent epitaxial double heterostructure promises low‐defect, thermally efficient nitride electronics for next‐generation RF technology.
Eungkyun Kim +6 more
wiley +1 more source
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Ксения Валерьевна Галунова +1 more
openalex +1 more source
This perspective highlights recent electroanalytical measurement advances in aqueous zinc metal batteries (AZMBs). We describe tools that decouple competing pathways, such as zinc deposition, faradaic hydrogen evolution reaction (HER), and corrosion HER. We show how these insights can help enable the rational design of next generation AZMBs.
Ashutosh Rana +7 more
wiley +1 more source
Beyond Silicon: Toward Sustainable, NIR‐II, and Conformable Organic Photodiodes
In this perspective, a strategic shift in organic photodetector (OPD) research is proposed: instead of the incremental advances in silicon's stronghold arena, the most impactful future for OPDs lies in addressing silicon's intrinsic limitations, i.e., detection in the longer wavelength range above silicon's coverage (>1100 nm, termed as near infrared ...
Hrisheekesh Thachoth Chandran +7 more
wiley +1 more source
The electron beam (EB) irradiation on dry‐processed electrode enhances the electrolyte wettability by oxidizing the intrinsic super‐hydrophobic nature of polytetrafluoroethylene polymeric binders. Thus, enhancing interfacial Li+ transport, the integration of EB irradiation into dry electrodes provides a scalable, solvent‐free route to boost electrode ...
Jong Uk Won +3 more
wiley +1 more source
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Андрей Александрович Черненко
openalex +1 more source

