Results 211 to 220 of about 404,013 (290)

Engineered GM1 Intersects Between Mitochondrial and Synaptic Pathways to Ameliorate ALS Pathology

open access: yesAdvanced Science, EarlyView.
Amyotrophic Lateral Sclerosis (ALS) is a fatal neurodegenerative disease driven by genetic and molecular disruptions affecting energy balance, protein homeostasis, and stress responses in nerve cells. Studies using human and rodent models identified convergent defects in mitochondria and synaptic function.
Federica Pilotto   +11 more
wiley   +1 more source

Scalable, Microwave‐Enabled Synthesis of Ternary WxTi1‐xO2 and Heterostructured TiO2‐WO3‐x Colloidal Nanocrystals: Carrier Dynamics and Photocatalytic Properties

open access: yesAdvanced Science, EarlyView.
Two microwave‐assisted synthetic methods, specifically a one‐pot and a seeded‐growth approach, are developed within a hydroalcoholic solution for the growth of single‐phase ternary WxTi1‐xO2 and heterostructured TiO2‐WO3‐x colloidal nanocrystals. Both types of nanocrystals show significant photocatalytic activity for 4‐methoxybenzyl alcohol oxidation ...
Riccardo Scarfiello   +13 more
wiley   +1 more source

Unraveling Energy Flow Mechanisms in Semiconductors by Ultrafast Spectroscopy: Germanium as a Case Study

open access: yesAdvanced Science, EarlyView.
A multi‐technique pump‐probe setup capable of performing both transient reflectivity and time‐resolved Raman spectroscopy after ultrafast excitation, provides a comprehensive understanding of ultrafast electronic and phononic processes. Distinct decay rates for the temperature, frequency, and linewidth of the phonon mode in germanium are observed ...
Grazia Raciti   +10 more
wiley   +1 more source

Author Correction: Exploring the space of self-reproducing ribozymes using generative models. [PDF]

open access: yesNat Commun
Lambert CN   +8 more
europepmc   +1 more source

Imperfection in Semiconductors Leading to High Performance Devices

open access: yesAdvanced Science, EarlyView.
Crystalline perfection is typically pursued in semiconductors to enhance device performance. However, through modeling and experimental work, we show that defects can be strategically employed in a specific detection regime to increase sensitivity to extreme values. GaN diodes are demonstrated to effectively detect high‐energy proton beams at fluxes as
Jean‐Yves Duboz   +8 more
wiley   +1 more source

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