Results 141 to 150 of about 5,029 (153)

Single-Crystalline β-Ga₂O₃ Homoepitaxy on a Near Van der Waals Surface of (100) Substrate. [PDF]

Adv Sci (Weinh)
Jiang T, Wang H, Zhu H, Cao J, Huo X, Yang Z, Li J, Ma Y, Zhang S, Xu X, Kong W.   +10 more
europepmc   +1 more source

Achieving 0.05 Ω-mm contact resistance in non-alloyed Ti/Au ohmics to <i>β</i>-Ga₂O₃ by removing surface carbon. [PDF]

APL Mater
Pieczulewski N, Smith KT, Efaw CM, Singh A, Gorsak CA, Buontempo JT, Wensel J, Azizie K, Gann K, Thompson MO, Schlom DG, Rana F, Nair HP, Hues SM, Graugnard E, Davis PH, Jena D, Xing HG, Muller DA.   +18 more
europepmc   +1 more source

Self-Trapped-Exciton Radiative Recombination in β-Ga₂O₃: Impact of Two Concurrent Nonradiative Auger Processes. [PDF]

ACS Appl Electron Mater
Grivickas V, Ščajev P, Miasojedovas S, Voss L, Grivickas P.   +4 more
europepmc   +1 more source

Extremely Low Thermal Resistance of β-Ga₂O₃ MOSFETs by Co-integrated Design of Substrate Engineering and Device Packaging. [PDF]

ACS Appl Mater Interfaces
Qu Z, Xie Y, Zhao T, Xu W, He Y, Xu Y, Sun H, You T, Han G, Hao Y, Ou X.   +10 more
europepmc   +1 more source

Elastic modulus of β-Ga₂O₃ nanowires measured by resonance and three-point bending techniques. [PDF]

Beilstein J Nanotechnol
Trausa A, Oras S, Vlassov S, Antsov M, Tiirats T, Kyritsakis A, Polyakov B, Butanovs E.   +7 more
europepmc   +1 more source

High Electron Mobility in Si-Doped Two-Dimensional β-Ga₂O₃ Tuned Using Biaxial Strain. [PDF]

Materials (Basel)
Zeng H, Ma C, Wu M.
europepmc   +1 more source

Impact of Channel Thickness and Doping Concentration for Normally-Off Operation in Sn-Doped β-Ga₂O₃ Phototransistors. [PDF]

Sensors (Basel)
Yoon Y, Kim Y, Shin M.
europepmc   +1 more source

Flexible Solar-Blind Ultraviolet Photodetector Based on β-Ga₂O₃ Nanowire Channel Bridge Structure: Combining High Responsivity and Strain Stability. [PDF]

Sensors (Basel)
Liu J, Ma T, Tian H, Zhang W, Liu Z, Gao Z, Bian B, Wu Y, Liu Y, Shang J, Li RW.   +10 more
europepmc   +1 more source

Space-Confined Growth of Ultrathin 2D β-Ga₂O₃ Nanoflakes for Artificial Neuromorphic Application. [PDF]

Small Sci
Liu M, Liu S, Yao J, Teng Y, Geng L, Li A, Wang L, Li Y, Guo Q, Shen Z, Kang L, Long M.   +11 more
europepmc   +1 more source

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ÐŸÐ¾Ð²ÐµÑ€Ñ Ð½Ð¾ÑÑ‚Ð½Ñ‹Ðµ явления при ионном облучении α-Ga2O3

2023
Объект исследования: эпитаксиальные пленки оксида галлия на сапфировой подложке. Цель работы: получение информации о поверхностных явлениях при облучении α-Ga2O3 ускоренными ионами.
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