[Noninvasive nanosecond transcranial pulsed electric fields: deep-penetrating, high-field stimulation for suppressing hippocampal amyloid-β and improving cognitive function in an Alzheimer's disease model]. [PDF]
Sheng Wu Yi Xue Gong Cheng Xue Za ZhiChen Y, Yao C, Yan F, Xiao P, Lu X.
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Sheng Wu Yi Xue Gong Cheng Xue Za Zhi, 2021 Kang T +6 more
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Sheng Wu Yi Xue Gong Cheng Xue Za ZhiChen Y, Yao C, Yan F, Xiao P, Lu X.
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Lin Chuang Er Bi Yan Hou Tou Jing Wai Ke Za Zhi, 2022 Yu L, Yang S, Wang Q, Li M.
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, 2011 [[abstract]]本發明係以鈦酸鉛鐵電薄膜作為閘極氧化物(gateoxide)，鉑(Pt)作為浮動閘極而將之置入於鈦酸鉛鐵電薄膜內，另外再配合具有高移動率(mobility)之快速體通道(bulk channel)場效電晶體結構，以得到一低電壓操作、快速讀取之非揮發性記憶體，其特色如下：(1)低的寫入/擦拭電壓(小於10伏特).(2)快速讀取，其讀取時間(access time)小於160毫微秒(
方, 炎坤;陳, 復元;陳, 建瑞
core
Dianci bileiqi针对强电磁脉冲产生的瞬态过电压会对二极管半导体造成损伤的问题，基于二极管击穿理论，采用理论与实验相结合的方法，使用纳秒级高压方波脉冲源作为电压脉冲源，选用BZX55C系列不同型号的稳压二极管进行了不同脉宽下的方波脉冲注入实验。实验结果表明：稳压二极管的损伤能量随稳压二极管的稳压值增大而增大，损伤形式表现为稳压值下降，漏电流增大，伏安特性曲线畸变；不同稳压值的二极管对方波脉冲的敏感端不同，当稳压值小于12 V时，负极比较敏感，当稳压值大于12 V时，正极比较敏感；二极管损伤能量并非是一个恒定值 ...
李祥超, 王兵
doaj
[Research on auditory neurofeedback technology and its multi-disciplinary applications]. [PDF]
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Microglia activation and temporal changes in rat model of trigeminal neuralgia. [PDF]
Hua Xi Kou Qiang Yi Xue Za Zhi, 2022 Lu Y, Zhang J, Lai W.
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Zhongguo Dang Dai Er Ke Za ZhiZeng XN, Wu AM, Li L, Zhu XH.
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