Results 11 to 20 of about 12,610 (131)

Designing 3d Transition‐Metal Doped g‐C3N4 Monolayer for Enhanced Bifunctional Oxygen Evolution/Reduction Reactions Activity: Defect Physics and Constant‐Potential Study

open access: yesRare Metals, Volume 45, Issue 4, April 2026.
ABSTRACT Graphitic carbon nitride (g‐C3N4) doped with 3d transition metals (3d‐TM@g‐C3N4) has gained attention as a noble metal‐free alternative for oxygen evolution and reduction reactions (OER/ORR). Yet the key mechanisms driving its performance remain debated, especially across different charge states.
Jing Zhang   +6 more
wiley   +1 more source

An Asymmetric Sandwich‐Structured Hydrogel Enables High‐Output Stable Moist–Electric Generation and Self‐Powered Sensing

open access: yesRare Metals, Volume 45, Issue 4, April 2026.
ABSTRACT Moisture‐enabled electricity generation technology offers a new paradigm for sustainable energy harvesting, but its practical applications are still limited by issues such as low output power and insufficient long‐term stability. In this paper, an asymmetric sandwich‐structured hydrogel moist–electric generator (SSHMEG) with an ion ...
Peng Chen   +7 more
wiley   +1 more source

Genomic responses to increased temperature and pollinator selection in Brassica rapa L.

open access: yesNew Phytologist, Volume 250, Issue 2, Page 1231-1247, April 2026.
Summary Rapid environmental change reshapes both abiotic stress and biotic interactions, yet it remains unclear how these combined forces structure plants' genomic adaptation. In particular, the joint influence of temperature and pollinator identity, two ecological axes undergoing simultaneous global shifts, has rarely been quantified at genomic ...
Yanqian Ding, Florian P. Schiestl
wiley   +1 more source

Systematic Study of Fermi‐Level Pinning at Crystalline Metal/GaN Interfaces: First‐Principles Calculations and Diode Characterization

open access: yesRare Metals, Volume 45, Issue 3, March 2026.
ABSTRACT The Schottky barrier height (SBH), which serves as a pivotal determinant of charge carrier injection efficiency in electronic devices, critically governs electrical behavior at metal/semiconductor interfaces. However, pronounced metal‐induced gap states at metal contact interfaces induce Fermi‐level pinning, which constrains the ...
Xiaofei Liu   +10 more
wiley   +1 more source

Excellent Comprehensive Electromechanical Properties in PZT‐Based Hard High‐Temperature Piezoceramics

open access: yesRare Metals, Volume 45, Issue 3, March 2026.
ABSTRACT High‐power piezoelectric ceramics which have a wide operating temperature range are essential for sensor and actuator applications in extreme conditions. However, their development is fundamentally hindered by the inherent trade‐off among key parameters (TC, d33, Qm).
Rui Yan   +10 more
wiley   +1 more source

Vertically Oriented Single‐Layer Grains for a Highly Bifunctional Perovskite Photovoltaic Light‐Emitting Device

open access: yesRare Metals, Volume 45, Issue 3, March 2026.
ABSTRACT The realization of bifunctional perovskite devices integrating photovoltaic (PV) and light‐emitting diode (LED) capabilities requires precisely controlled grain architectures to facilitate dual carrier transport pathways. In this work, sulfaguanidine (SG) molecules were introduced into the perovskite solution to reconstruct the crystallization
Jiong Li   +7 more
wiley   +1 more source

Characteristic of the Dielectric Barrier Discharge in Air at Difference Pressure [PDF]

open access: yes, 2008
建立了一套放电装置,放电室内的空气压力可调。设计并制作了单面梳状和平行双平面两种电极板,在不同气压环境下进行空气介质阻挡放电实验。拍摄记录了放电现象,采用电荷-电压(q-V)法处理了放电的有关测量数据,对实验结果进行了分析。研究结果表明,空气介质阻挡放电的特性变化与放电环境气压有关。在各种气压条件下,该文的介质阻挡放电均呈脉冲群间歇性;随着放电环境气压减小,放电由常压下的粗大流注电晕逐渐变成细而密集的细丝状微流注电晕,直至融合为貌似辉光放电;放电脉冲群的密度和宽度也随气压降低而增加,但脉冲幅值减小 ...
林麒, 赖饶昌
core  

500kV集中式标准电容分压器的研制

open access: yesGaoya dianqi, 2019
研制了一种基于标准电容器的集中式电容分压器,该分压器的高低压臂电容电极采用同种金属极板材料并处于压缩SF6气体绝缘介质中,可以保证分压器高低压臂电容温度系数、电压系数等特性参数的一致性,进而保证电容分压器分压比的稳定性;采用理论计算及仿真分析相结合的方式确定了标准电容器各部分的尺寸。针对绝缘外筒表面上存在电压分布不均匀的情况,在分压器内部加设多层均压电极后改善了绝缘套管上的电场分布情况。经实际测试,标准电容分压器高压臂电容量及分压比实测值与理论计算值十分接近,其高压臂电容量电压系数为1.01×10-5。
刘少波   +7 more
doaj  

Tantalum‐Driven Interfacial Reconstruction Enables Ultra‐Low Contact Resistance in TiAlTa/Au GaN HEMTs

open access: yesRare Metals, Volume 45, Issue 2, February 2026.
ABSTRACT The transformative potential of gallium nitride high electron mobility transistors (GaN HEMTs) in advancing carbon‐neutral power systems remains bottlenecked by contact resistance (Rc) at the metal–semiconductor (M‐S) interface, a critical determinant of switching losses and frequency response.
Ji‐Zhou Zhang   +8 more
wiley   +1 more source

绝缘筒式串级试验变压器稳态电压分布研究

open access: yesGaoya dianqi, 2011
在设计阶段准确计算并改善串级试验变压器的各级电压分布,对于合理地设计串级试验变压器具有十分重要的意义。笔者针对一台2250kV绝缘筒式串级试验变压器,根据变压器的绕组结构和外部尺寸利用有限元分析软件分别计算出变压器的内部和外部的电容参数,并将变压器外部电容采用等电位分配的方法归算为变压器级间电容。运用分配负载电容的方法建立变压器电压分布计算的等值电路,采用ATP-EMTP进行仿真计算,获得变压器的稳态电压分布。在变压器不满足电压分布要求的情况下 ...
顾朝敏   +4 more
doaj  

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