本发明公开了一种大规模防止MEMS器件结构层材料被电化学腐蚀的方法,该方法是利用光刻胶这种高分子材料来阻断器件的结构层材料与贵金属在HF基腐蚀液中形成原电池的电学通路,具体包括:在SiO2层的湿法腐蚀之前,在器件表面旋涂一层光刻胶,使其完全覆盖贵金属层表面。利用本发明,使光刻胶形成具有较低孔密度的致密体型高分子结构,阻断贵金属与结构层材料在HF基腐蚀液中的原电池电路,从而有效避免了结构层材料被氧化腐蚀。该方法仅在标准MEMS器件加工工艺中增加一步标准光刻步骤 ...
解婧, 杨富华, 刘云飞, 杨晋玲
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