, 2010 本文针对磷化铁(FeP_2)气氛下高温退火非掺杂半绝缘磷化铟(IP SI-InP)材料,应用正电子寿命谱及热激电流谱学技术,研究了该材料在电子辐照前后的缺陷情况.研究发现,该材料经电子辐照后缺陷浓度在增大,且形成了复合体的缺陷结构,电子辐照后的正电子湮没平均寿命增加了18 ps,对应的热激电流谱(TSC)也出现了相应的缺陷峰.本文还对缺陷的特性 ...
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Dianci bileiqi, 1995 介绍了引入煅烧铝矾土的中强度瓷配方试验和ＸＷＰ－７０耐污悬式绝缘子的研制情况，认为采用引入２０％煅烧铝矾土的中强度瓷配方制造的７０ｋＮ悬式绝缘子可靠性较高。对影响瓷质强度和产品机电性能（机电破坏负荷）的诸因素进行了探讨。
邹长根
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Beijing Da Xue Xue Bao Yi Xue Ban, 2019 Lei Y, Yang YT, Zhan Y.
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, 2004 利用LPCVD方法,在厚表层Si(SOL≈0.5μm)柔性绝缘衬底(SOI)(001)上外延生长出了可与硅衬底上外延晶体质量相比拟的SiC/SOI,表明SOI是一种很有潜力的柔性衬底. Raman 光谱结果表明SiC/SOI外延层比SiC/Si外延层有更大的残存应力,对此从理论上进行了解释.利用X射线衍射(XRD)、原子力显微镜(AFM)、扫描电镜(SEM)和喇曼散射光谱(RAM)技术研究了外延材料的晶体结构 ...
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