Results 11 to 20 of about 8,002 (119)
Design of carrylook-ahead adder at switch level(超前进位全加器的开关级设计)
Zhejiang Daxue xuebao. Lixue ban, 2003 应用CMOS电路开关级设计技术对超前进位全加器进行了设计,并用PSPICE模拟进行了功能验证.与传统门级设计电路相比,本文设计的超前进位电路使用了较少的MOS管,并能保持原有的传输延迟.
SHENYan-fei(沈雁飞) +1 more
doaj +1 more source
On-line support vector regression with multiple samples(基于多样本的在线支持向量回归算法)
Zhejiang Daxue xuebao. Lixue ban, 2011 提出一种针对多样本的在线支持向量回归(SVR)算法，以解决目前SVR在线训练算法每次只能处理1个样本的问题.算法以拉格朗日乘数法和库恩-塔克(KKT)条件为基础，逐步改变样本的系数，并在每次迭代中保持原来的样本满足KKT条件，最终使所有训练样本满足KKT条件.实验表明，该方法可有效更新SVR模型，且计算效率相比于基于单样本的在线回归算法有较大的优势.
CAOKui-kang(曹葵康) +1 more
doaj +1 more source
Threshold-arithmetic algebraic system and design of current-mode CMOS circuits(阈算术代数系统及电流型CMOS电路设计)
Zhejiang Daxue xuebao. Lixue ban, 2013 根据电流信号易于实现算术运算的特点，定义了阈算术运算、非负运算和阈算术函数，提出了和图为阈算术函数的图形表示，从而建立了阈算术代数系统.并通过具体的电流型CMOS电路的设计实例，阐述了算术意义明确的电流型电路设计方法及基于和图的电流型电路设计方法，实现了阈算术代数在二值电流型CMOS电路中的应用.计算机模拟结果表明，所设计的电路具有正确的逻辑.提出的阈算术代数系统为电流型电路的设计提供了一种新的简单有效的方法.
ZHANGGuan-zhi(张官志) +3 more
doaj +1 more source
Zhejiang Daxue xuebao. Lixue ban, 2002 以开关信号理论为指导,对电流型CMOS电路中开关变量和信号变量的相互作用进行了分析,并引入了适用于CMOS电路的电流开关理论.基于接地电流开关理论,对几类重要的三值CMOS电路进行了设计.结果表明,应用该理论能获得简单的电路设计.从而进一步完善了开关级逻辑电路设计的研究.
BIJing(毕净) +2 more
doaj +1 more source
Design of current-mode CMOS ADC circuit based on pipelined structure(基于Pipelined结构的电流型CMOS模数转换器电路设计)
Zhejiang Daxue xuebao. Lixue ban, 2013 低功耗设计在当前超大规模集成电路中越来越重要.以电流信号为转换对象，利用电流传输理论，结合电流型CMOS电路设计技术，设计了8位基于Pipelined结构的ADC电路.结果表明，利用电流型CMOS电路可方便地实现电流信号的加减与放大运算，避免了使用传统Pipelined电路结构中的运算放大器电路，因此电路结构简单，可显著降低电路的功耗，提高转换速度，计算机仿真结果表明，电路功能正确.
ZHOUXuan-chang(周选昌) +1 more
doaj +1 more source
Design of quaternary Schmitt circuits(四值施密特电路设计)
Zhejiang Daxue xuebao. Lixue ban, 2001 本文分析了四值施密特电路工作过程中的时序特征，导出了相应的特征方程，并利用时序电路的设计方法，提出两种四值施密特电路的设计方案.基于TTL技术设计的四值施密特电路已用PSPICE模拟证明了具有理想的施密特电路功能.讨论表明四值施密特电路的特征方程及电路的逻辑结构与对二值施密特电路及三值施密特电路讨论的结果相同，由此发现各种基的施密特电路具有共性.
WANGPeng-jun(汪鹏君) +2 more
doaj +1 more source
Rare Metals, Volume 45, Issue 3, March 2026.ABSTRACT Low conductivity, slow ion‐diffusion, and limited reactive sites are common problems in electrocatalysts and electrode materials. In this study, a complex NiTe–CoTe heterojunction with abundant Te vacancies embedded in N, P, and F co‐doped hollow carbon nanorods (NiTe1−x–CoTe1−x/NPFC) was fabricated via a simple ionic liquid‐assisted ...
Mingjie Yi +7 more
wiley +1 more source
Rare Metals, Volume 45, Issue 3, March 2026.ABSTRACT Efficient and durable bifunctional electrocatalysts are vital for scalable water electrolysis. Here, we realize cobalt‐vacancy (Covac) engineering in CoFeP supported on N,P‐codoped carbon nanocages (Co1‐vacFeP/NPC) through a simple route comprising a CoFe Prussian blue analog precursor, phosphidation–pyrolysis, tannic‐acid etching, and a ...
Yuan‐Liang Yuan +6 more
wiley +1 more source
Rare Metals, Volume 45, Issue 3, March 2026.ABSTRACT Developing Cu‐based composites that simultaneously achieve ultra‐high strength, ductility, and electrical conductivity remains critical for advanced electrical contact applications. In this work, multiphase AlCrCuFeNi2.5 high‐entropy alloy (HEA) reinforcements are incorporated into CuCrZr matrix via spark plasma sintering (SPS) and annealing ...
Tao Hong +8 more
wiley +1 more source
Rare Metals, Volume 45, Issue 3, March 2026.ABSTRACT Tellurium (Te), emerging as a promising alternative to sulfur (S) and selenium (Se), offers significant advantages for potassium (K) ion storage due to its comparable theoretical volumetric capacity (2619 mAh cm−3) and higher electronic conductivity (∼102 S m−1), which promotes rapid charge transfer and improves reaction kinetics.
Sung Woo Cho +7 more
wiley +1 more source