Results 11 to 20 of about 9,057 (144)

International clinical practice recommendations on the definition, diagnosis, assessment, intervention, and psychosocial aspects of developmental coordination disorder – Chinese (Mandarin) translation

open access: yesDevelopmental Medicine &Child Neurology, Volume 61, Issue 3, Page E1-E35, March 2019., 2019
目的 本国际临床指南由欧洲残疾儿童学会(the European Academy of Childhood Disability,EACD)牵头制定,旨在解决发育性协调障碍(developmental coordination disorder,DCD)的定义、诊断、评估、干预以及与社会心理方面的临床应用关键问题。 方法 本指南针对五个领域的关键问题,通过文献综述和专家团队的正式讨论达成共识。为保证指南的循证基础,以“机制”、“评估”和“干预”为检索词, 对2012年更新以来提出的最新建议以及新增的“社会心理问题”和“青少年/成人”为检索词进行检索。根据牛津大学循证医学中心证据等级 (证据水平 [level of evidence, LOE]1–4) 将结果进行分类,最终转化为指南建议。并由国际 ...
Jing Hua   +6 more
wiley   +1 more source

An Asymmetric Sandwich‐Structured Hydrogel Enables High‐Output Stable Moist–Electric Generation and Self‐Powered Sensing

open access: yesRare Metals, Volume 45, Issue 4, April 2026.
ABSTRACT Moisture‐enabled electricity generation technology offers a new paradigm for sustainable energy harvesting, but its practical applications are still limited by issues such as low output power and insufficient long‐term stability. In this paper, an asymmetric sandwich‐structured hydrogel moist–electric generator (SSHMEG) with an ion ...
Peng Chen   +7 more
wiley   +1 more source

Systematic Study of Fermi‐Level Pinning at Crystalline Metal/GaN Interfaces: First‐Principles Calculations and Diode Characterization

open access: yesRare Metals, Volume 45, Issue 3, March 2026.
ABSTRACT The Schottky barrier height (SBH), which serves as a pivotal determinant of charge carrier injection efficiency in electronic devices, critically governs electrical behavior at metal/semiconductor interfaces. However, pronounced metal‐induced gap states at metal contact interfaces induce Fermi‐level pinning, which constrains the ...
Xiaofei Liu   +10 more
wiley   +1 more source

Boosting Piezoelectric Voltage Constant in 3D‐Interconnected PZNNT Porous Piezoceramics via Pore Architecture Engineering

open access: yesRare Metals, Volume 45, Issue 3, March 2026.
ABSTRACT In conventional piezoceramics, the coordinated change between the dielectric constant (εr) and the piezoelectric charge constant (d33) usually limits the piezoelectric voltage constant g33 (g33 = d33/εr), a critical figure of merit for piezoelectric sensors.
Xiaoying Feng   +7 more
wiley   +1 more source

Excellent Comprehensive Electromechanical Properties in PZT‐Based Hard High‐Temperature Piezoceramics

open access: yesRare Metals, Volume 45, Issue 3, March 2026.
ABSTRACT High‐power piezoelectric ceramics which have a wide operating temperature range are essential for sensor and actuator applications in extreme conditions. However, their development is fundamentally hindered by the inherent trade‐off among key parameters (TC, d33, Qm).
Rui Yan   +10 more
wiley   +1 more source

Vertically Oriented Single‐Layer Grains for a Highly Bifunctional Perovskite Photovoltaic Light‐Emitting Device

open access: yesRare Metals, Volume 45, Issue 3, March 2026.
ABSTRACT The realization of bifunctional perovskite devices integrating photovoltaic (PV) and light‐emitting diode (LED) capabilities requires precisely controlled grain architectures to facilitate dual carrier transport pathways. In this work, sulfaguanidine (SG) molecules were introduced into the perovskite solution to reconstruct the crystallization
Jiong Li   +7 more
wiley   +1 more source

纪念《高压电器》创刊二十五周年

open access: yesGaoya dianqi, 1983
《高压电器》创刊于1958年11月,至今已整整二十五年了。《高压电器》的前身,是由沈阳高压开关厂和当时的西安开关整流器厂合办的作为全国高压开关行业技术情报刊物的《高压开关技术报导》。1959年6月,一机部高压电器研究所成立后,经编委会会议决定:《高压开关技术报导》改名为《高压电器 ...
《高压电器》编辑部
doaj  

Research on New Type of 252kV GIS Design Concept and Key Technologies [PDF]

open access: yes, 2013
随着社会经济的繁荣进步,用电量需求的不断增长,城市变电站的新建和扩容需求日益强烈。目前国内已有的252kV气体绝缘金属封闭开关设备(GasInsulatedSwitchgear,简称GIS)由于占地面积大,SF6气体使用量过多,内部电场复杂。为了减少在高压开关设备中用于灭弧和绝缘的SF6这种温室气体的用量,对新一代的252kVGIS进行优化处理势在必行。GIS设备的小型化、易操作、智能化、高可靠性、制造和运行低成本已成为一种发展趋势。本文在已有的理论和实践的基础上,对GIS的技术发展进行了研究和探讨 ...
胡辉
core  

Tantalum‐Driven Interfacial Reconstruction Enables Ultra‐Low Contact Resistance in TiAlTa/Au GaN HEMTs

open access: yesRare Metals, Volume 45, Issue 2, February 2026.
ABSTRACT The transformative potential of gallium nitride high electron mobility transistors (GaN HEMTs) in advancing carbon‐neutral power systems remains bottlenecked by contact resistance (Rc) at the metal–semiconductor (M‐S) interface, a critical determinant of switching losses and frequency response.
Ji‐Zhou Zhang   +8 more
wiley   +1 more source

《中国电器工业发展史·专业卷》的编审工作正在积极进行

open access: yesGaoya dianqi, 1990
继《中国电器工业发展史·综合卷》于1989年12月正式出版发行之后,《中国电器工业发展史·专业卷》将于1990年出版发行。 在《中国电器工业发展史·专业卷》中,高压电器部分将有30千字的版面。书稿正在作最后的编撰、修订与审定工作。 为了在《专业卷》中全面反映高压电器的历史,以及收集最近的发生资料,专业分编委会希望全行业能将有关资料核实整理,尽快寄送《高压电器》编辑部。这样,就能使那些重要的成就与贡献载入史册,给有关的事和人树碑立传,继往开来 ...
《高压电器》编辑部
doaj  

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