Results 251 to 260 of about 95,605 (300)

Multi-GeV electron beam generation via two-stage laser wakefield acceleration. [PDF]

Sci Rep
Haq RU, Rezaei-Pandari M, Xie X, Liang X, Sun M, Zhu P, Lu Z, Zhang G, Li L, Xue H, Hafz NAM, Zhu J.   +11 more
europepmc   +1 more source

Nonmetallic Atom Regulation for Enhanced NiPr Monolayer Sensing of SF₆ Decomposition Gases: A DFT Study. [PDF]

ACS Omega
Long X, He X, He H, Zhang Y, Xiong M, Dai E, Nie Z.   +6 more
europepmc   +1 more source

Low-Temperature Ethanol Gas Sensor Based on MoO₃/Nb₂C MXene Composite via Crystal Engineering and Facet Release. [PDF]

Sensors (Basel)
Zhang B, Zhou H, Zhu X, Chen H, Yang Y.
europepmc   +1 more source

First-principles study of phenol sensing properties on β-arsenic phosphide monolayers. [PDF]

Sci Rep
Vijay Balaji M, Chandiramouli R, Bhuvaneswari R, Nagarajan V.   +3 more
europepmc   +1 more source

Spin effects in the 2D electron gas

Solid State Communications, 2001
Abstract Spin affects the properties of the electron gas in a subtle way. The quantitative and, in fact, even the qualitative determination of spin dependent properties in this system requires calculations of extreme accuracy. Here, we review predictions of fixed-node diffusion Monte Carlo simulations with Slater–Jastrow as well as backflow nodes for
SENATORE, GAETANO, MORONI S., VARSANO D.
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Origin of the 2D Electron Gas at the SrTiO₃ Surface

Advanced Materials, 2022
AbstractBulk SrTiO3 is a well‐known band insulator and the most common substrate used in the field of complex oxide heterostructures. Its surface and interface with other oxides, however, have demonstrated a variety of remarkable behaviors distinct from those expected.
Xi Yan, Friederike Wrobel, I‐Cheng Tung, Hua Zhou, Hawoong Hong, Fanny Rodolakis, Anand Bhattacharya, Jessica L. McChesney, Dillon D. Fong   +8 more
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Organic High Electron Mobility Transistors Realized by 2D Electron Gas

Advanced Materials, 2017
A key breakthrough in inorganic modern electronics is the energy‐band engineering that plays important role to improve device performance or develop novel functional devices. A typical application is high electron mobility transistors (HEMTs), which utilizes 2D electron gas (2DEG) as transport channel and exhibits very high electron mobility over ...
Panlong Zhang, Haibo Wang, Donghang Yan
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TRANSPORT IN A POLARIZATION-INDUCED 2D ELECTRON GAS

International Journal of High Speed Electronics and Systems, 2001
AlGaN/GaN structures constitute a new class of 2D systems in that a large population of electrons can be produced without doping as a result of spontaneous and strain-induced polarization. Electron transport can, in principle, be mediated solely by phonon scattering and, for the first time, it is possible to realistically envisage the formation of a ...
B. K. RIDLEY, N. A. ZAKHLENIUK
openaire   +2 more sources