Results 231 to 240 of about 485,582 (249)

Materials and System Design for Self‐Decision Bioelectronic Systems

open access: yesAdvanced Materials, EarlyView.
This review highlights how self‐decision bioelectronic systems integrate sensing, computation, and therapy into autonomous, closed‐loop platforms that continuously monitor and treat diseases, marking a major step toward intelligent, self‐regulating healthcare technologies.
Qiankun Zeng   +9 more
wiley   +1 more source

Ultra‐Sensitive Nanofiber‐Based Triboelectric Nanogenerator for Energy Harvesting and Self‐Powered Sensing

open access: yesAdvanced Materials, EarlyView.
A multidimensional molecular strategy optimizes the tribonegative layer by electrospinning PVDF‐HFP for dipole alignment and crystallinity, followed by 2D borophene doping to enhance conductivity and charge trapping. Integrated with Nylon‐66 nanofibers, the composite device delivers a record sensitivity of 53.8 ± 1.2 V kPa−1 at 3 Hz, enabling ultra ...
Sajib Roy   +7 more
wiley   +1 more source

Scalable, Bottom‐Up Synthesis of Transition Metal–Doped Quantum Confined, 1D Titanate‐Based Lepidocrocite Nanofilaments, Their Electronic Structures and Oxygen Evolution Reactivity

open access: yesAdvanced Materials Interfaces, EarlyView.
Quantum‐confined lepidocrocite titanate nanofilaments are doped, bottom‐up, with Mn+2, Fe+2, Co+2, Ni+2, and Cu+2 to tune electronic structure and catalysis. Doping narrows the bandgap—by up to ∼0.8 eV—and extends visible absorption. Ni‐doped filaments accelerate oxygen evolution (319 mV at 10 mA cm−2) and TM‐doped samples rapidly degrade rhodamine 6G (
Mohamed A. Ibrahim   +6 more
wiley   +1 more source

Correction to: Granulopoietic Dysregulation in a Patient-Tailored Mouse Model of Barth Syndrome. [PDF]

open access: yesStem Cell Rev Rep
Sierra Potchanant EA   +12 more
europepmc   +1 more source

Designing Defect Structure and Interfacial Strain in an Epitaxial VN Bilayer Film by Tailoring N Concentration

open access: yesAdvanced Materials Interfaces, EarlyView.
The N concentration in an epitaxial VN bilayer is tailored from overstoichiometric V0.49N0.51 to understoichiometric V0.56N0.44. Based on ab initio, diffraction, and microscopy data, the overstoichiometric V0.49N0.51 layer contains V vacancies, N Frenkel pairs, and a high density of dislocations.
Marcus Hans   +7 more
wiley   +1 more source

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