Results 221 to 230 of about 2,259,543 (335)
Stacked Nanosheet Gate‐All‐Around Morphotropic Phase Boundary Field‐Effect Transistors
Advanced Science, EarlyView.This study proposes a material design using ferroelectric‐antiferroelectric mixed‐phase HZO to achieve steep subthreshold swing and non‐hysteretic on‐current enhancement in morphotropic phase boundary field‐effect transistors (MPB‐FETs). For the first time, two‐stacked nanosheet GAA MPB‐FETs with optimized HZO are demonstrated, validating superior ...
Sihyun Kim +3 more
wiley +1 more source
Foundations Of A Planned Economy, 1926-1929, vol. 3, parts 1 and 2. By Edward Hallett Carr. A History of Soviet Russia. New York: Macmillan, 1976. Part 1: x, 313 pp. Part 2: 330 pp. (pp. 315-644). $17.50. each volume. [PDF]
, 1979 Holland Hunter
openalex +1 more source
Advanced Science, EarlyView.A new analytical pipeline, FREQuency‐resolved Network Estimation via Source Separation (FREQ‐NESS), reveals how the brain at rest is organized in frequency‐specific networks and dynamically rearranges during auditory stimulation. By analyzing source‐reconstructed magnetoencephalography (MEG) data, FREQ‐NESS uncovers the networks' prominence, spatial ...
Mattia Rosso +6 more
wiley +1 more source
Advanced Science, EarlyView.This groundbreaking research has advanced the utilization of quantum rods (QRs) for the emission of linearly polarized light, resulting in exceptional color saturation and enhanced display efficiency. The developed filter demonstrates a polarization degree of up to 0.67 and an impressive ambient contrast ratio (ACR) of 263:1, setting the stage for ...
Jianxin Song +12 more
wiley +1 more source
Mark D. Altschule, The development of traditional psychopathology. A sourcebook, Washington, D.C., and London, Hemisphere, 1976, 8vo, pp. v, 330, £14.70. [PDF]
, 1978 openalex +1 more source
Deep‐UV Light‐Emitting Based on the hBN:S/hBN: Mg Homojunction
Advanced Science, EarlyView.S‐atoms are selected as donor dopants to achieve the n‐type conductivity of the hBN film. A theoretical model of S‐doping hBN using DFT calculation and experimentally prepared S‐doped hBN multilayers with a recorded doping concentration of 1.21% is established.
Ransheng Chen +10 more
wiley +1 more source