Results 161 to 170 of about 691,068 (248)

An Electrowetting Pump

open access: yesAdvanced Functional Materials, EarlyView.
A tubular electrowetting pump moves alternating droplets through a millimeter‐wide channel in discrete, reversible steps, functioning as a fluidic stepper motor. With no moving parts and electrodes insulated from the liquid, it delivers silent, accurate flow. Flexibility allows the pump to be woven directly into textiles for wearable, medical, and soft‐
Robert Hennig, Herbert Shea
wiley   +1 more source

Dosimetry of a Thermoregulated TEM Cell for 5G 700 MHz and 3.5 GHz Band Frequencies for Bioelectromagnetic Investigations. [PDF]

open access: yesSensors (Basel)
Nasri A   +7 more
europepmc   +1 more source

Imaging the Thickness‐Dependent Formation of Schottky Barriers in Metal–Semiconductor van der Waals Heterostructures

open access: yesAdvanced Functional Materials, EarlyView.
Using nanobeam photoemission, we demonstrate imaging of the in‐plane and out‐of‐plane electric field landscape within a metal–semiconductor van der Waals heterostructure. We provide evidence for Schottky barrier formation that depends on the semiconductor thickness. ABSTRACT Achieving high‐performance optoelectronic devices based on two‐dimensional van
Dario Mastrippolito   +17 more
wiley   +1 more source

Disentangling Bulk and Surface Contributions to Charge and Discharge Fading in High‐Voltage LiCoO2

open access: yesAdvanced Functional Materials, EarlyView.
High‐voltage operation of LiCoO2 accelerates capacity fading through bulk and surface degradation. By introducing a LiTaO3 coating to selectively suppress surface degradation, bulk and surface contributions to charge and discharge fading are decoupled.
Hyungjoon Moon   +6 more
wiley   +1 more source

Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing

open access: yesAdvanced Functional Materials, EarlyView.
A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin   +7 more
wiley   +1 more source

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