Results 261 to 270 of about 1,610,034 (354)

Ab-initio calculations of structural, electronic, and magnetic properties of Li based heusler compounds

In today's technology, the basic properties of these materials must be known to benefit from the material that is produced artificially or exists naturally.
Ayhan, Seyfettin, Balci, Gulten Kavak
core  

Structural Basis of Shiga Toxin Neutralization by Human Antibodies Targeting Canonical Receptor‐Binding and Non‐Canonical Assembly Sites

Advanced Science, EarlyView.
Cryo‐electron microscopy structures reveal two distinct neutralization mechanisms of fully human monoclonal antibodies targeting the Shiga toxin 1a B subunit. RDS059 occludes the Gb3 receptor‐binding site, whereas RDS045 engages a lateral quaternary epitope to disrupt holotoxin assembly.
Jianting Ke, Xin Li, Xiaoli Wang, Zhaoxia Huang, Shaojie Xue, Yuyang Liu, Jing Pan, Guowei Hu, Yayu Wang, Cheng Wang, Shoudeng Chen   +10 more
wiley   +1 more source

Alchemical thermodynamic integration for ab initio free-energy calculations in solutions [PDF]

Liangrui Wei, F Zhang, Renata M. M. Wentzcovitch, Kai‐Ming Ho, Yang Sun   +4 more
openalex   +1 more source

Integrated O2 and H2 Gas Therapy via Microneedle‐Assisted Photocatalytic Water Splitting for Accelerating Diabetic Full‐Thickness Skin Wound Healing

Advanced Science, EarlyView.
A concept of integrated O2 and H2 gas therapy is achieved using a gas‐producing material. PMP nanoparticles, fabricated from platinum, MIL‐101(Fe)‐NH2, and phosphotungstic acid, are integrated into bilayer gelatin methacryloyl microneedles for transdermal delivery. These microneedles enable integrated O2 and H2 gas therapy and promote wound healing via
Zesheng Chen, Yanchao Yu, Xingyuan Xiao, Wenwen Cheng, Ye Yang, Zhengyao Zhang, Wang Wang, Zhijun Zhou, Weikang Hu, Xiaolong Wang, Bing Li, Kwang Leong Choy, Yun Chen, Zijian Wang   +13 more
wiley   +1 more source

Role of dielectronic recombination and resonant transfer excitation processes in ion beam-plasma interactions based on ab initio calculation

Zh. Zhao, B. Ma, JieRu REN, Yun Liu, Xuyang Luo, Jinglin Rui, Wenliang He, Dieter H. H. Hoffmann, Hu Xu, Peng Zhou, Xing Wang, Yuan Li, Chenzhong Dong, Lu-You Xie, Yongtao Zhao   +14 more
openalex   +1 more source

The role of ab initio beta-decay calculations in light nuclei for probes of physics beyond the standard model [PDF]

Grigor H Sargsyan, G. B. King, Ayala Glick-Magid, Chien-Yeah Seng   +3 more
openalex   +1 more source

Disorder Driven Anisotropic Nonlinear Hall Effect in the Kagome Metal YbCo6Ge6 at Room Temperature

Advanced Science, EarlyView.
The intrinsic structural disorder and short‐range correlated motifs in the kagome metal YbCo6Ge6 constitute the primary mechanism for a robust and anisotropic nonlinear Hall effect (NLHE). This effect is sustained across a wide temperature range, achieving a nonlinear responsivity of up to ∼4.5 × 10−3 m/V at 70 K, higher than known disordered and ...
Qurat Ul Ain, Weiyao Zhao, Thanh Tung Huynh, Yuefeng Yin, Fang Tang, Yong Fang, Junlin Yan, Jacek Jasieniak, Timothy Petersen, Yang Liu, Nikhil V. Medhekar, Julie Karel   +11 more
wiley   +1 more source

Ion‐Exchange‐Driven Ternary Organic Neuromorphic Devices with High Efficiency and Stability

Advanced Science, EarlyView.
Spontaneous ion exchange in a ternary polymer–ionic liquid blend disrupts the phase‐separated ionic domains of the binary film and creates a more homogeneous polymer–ion environment. This ionically reorganized matrix enables stable and efficient electrochemical doping, leading to ion‐gel‐gated organic electrochemical transistors with enhanced ...
Sungmin Lee, Vivek Pratap Singh, Hyeonryul Lee, Young‐Yong Kim, Yong‐Ryun Jo, Changhoon Lee, Ji Hoon Shim, Namsoo Lim, Guanjie Wang, Junyeong Sung, Dongyeop Yang, Zhongwu Wang, Liqiang Li, Chandran Balamurugan, Sooncheol Kwon   +14 more
wiley   +1 more source

Dateset for alchemical thermodynamic integration for ab initio free-energy calculations in solutions

Liangrui Wei
openalex   +2 more sources

Ultrahigh Interfacial Thermal Conductance across GaN/BAs Interfaces via Atomic‐Level Engineering

Advanced Science, EarlyView.
The integration of gallium nitride (GaN) with ultrahigh‐thermal‐conductivity boron arsenide (BAs) substrates represents a promising pathway for developing next‐generation high‐power devices. The heat dissipation capability of such integrated systems is fundamentally governed by thermal transport across GaN/BAs interfaces, and buffer layers such as ...
Linfeng Yu, Hongkai Zhang, Haofeng Qin, Yi Zhang, Jinyuan Xu, Yiming Zhao, Dongliang Ding, Jianbin Xu, Sunmi Shin, Zhuhua Zhang, Guangzhao Qin   +10 more
wiley   +1 more source