Results 221 to 230 of about 237,029 (312)
Applicability Analysis of High-Voltage Transmission and Substation Equipment Based on Silicon Carbide Devices. [PDF]
Zhang H +6 more
europepmc +1 more source
Robust C–V Ratio Technique for Profiling Defects in Proton‐Irradiated 4H‐SiC
A noise‐robust C–V ratio technique is introduced to profile radiation‐induced defects in proton‐irradiated 4H‐SiC Schottky diodes. By using analytical capacitance ratios instead of numerical differentiation, the method directly extracts trap‐density and effective trap‐energy profiles at room temperature.
Kibeom Kim +4 more
wiley +1 more source
Predictive Utility of Cerebral Blood Flow Transients in Experimental Stroke. [PDF]
Lückl J +4 more
europepmc +1 more source
Zirconium, hafnium, and mixed zirconium/hafnium doped indium tin oxide thin films are accessible by atomic layer deposition. The amorphous functional films are about 8 nm thick and show a high interdiffusion of all elements. Their transistor characteristics can be modulated depending on the amount of Zr and Hf oxide phases incorporated in these thin ...
Marie Isabelle Büschges +5 more
wiley +1 more source
Novel resilient solar photovoltaic power extraction strategy for rural AC micro grids with enhanced incremental conductance based MPPT. [PDF]
Shanmugam P +7 more
europepmc +1 more source
This work shows the first proof‐of‐concept for fully self‐healing and stretchable coplanar waveguide (CPW) transmission line using printable electrically conductive liquid metal elastomer. RF performance was evaluated in frequency ranging from 1 to 6 GHz under uniaxial tensile strain up to 100%, after self‐healing, and for 1000 cyclic stretch‐release ...
Ahmed Albeltagi +6 more
wiley +1 more source
Wideband circularly polarized leaky wave rectenna. [PDF]
Mohamed N +4 more
europepmc +1 more source
Interface‐Engineered TiO2 Interlayer for Reliable Hafnia‐Based MFMIS FeFETs
An ultrathin TiO2 interlayer suppresses oxygen‐vacancy formation in HZO‐based MFMIS FeFETs, enabling enlarged memory windows and reduced leakage current with improved switching characteristics. ABSTRACT We investigated a TiO2‐engineered interfacial strategy to enhance the stability and reliability of hafnia‐based ferroelectric field‐effect transistors (
Changhyeon Han +4 more
wiley +1 more source
Motorized semi-automated prism bar technique for enhanced prismatic evaluation. [PDF]
Suresh G +4 more
europepmc +1 more source

