Results 151 to 160 of about 705,421 (313)

Counterion‐Controlled Photocatalytic Doping of Organic Semiconductors

open access: yesAdvanced Materials, EarlyView.
Counterion size is shown to actively control photocatalytic doping in organic semiconductors. Small anions suppress aggregation of acridinium photocatalysts, enhance electron transfer, and dramatically increase doping efficiency. This simple strategy enables conductivities up to 2000 S cm−1 in benchmark polymers, revealing counterions as a powerful yet
Tiefeng Liu   +16 more
wiley   +1 more source

Ferromagnetism of Molecular Beam Epitaxy‐grown Ultra‐thin Cr2Ge2Te6 Films Down to the Monolayer Limit on Si Substrates

open access: yesAdvanced Materials, EarlyView.
Uniform monolayer Cr2Ge2Te6 films are achieved on Si substrates by molecular beam epitaxy. Intrinsic ferromagnetism with perpendicular magnetic anisotropy is established in the films by anomalous Hall effect and superconducting quantum interference device measurements, albeit with strong magnetic fluctuations characteristic of its 2D nature.
Pengfei Ji   +15 more
wiley   +1 more source

Superior Impact‐Resistant Composite Hydrogels Through an Ionic Coupling Strategy

open access: yesAdvanced Materials, EarlyView.
An ionic coupling strategy is developed to simultaneously reinforce networks and interfaces in composite hydrogels. Sodium citrate acts as a single multifunctional ionic coupler to strengthen the poly(vinyl alcohol) matrix via the Hofmeister effect, reinforce the chitosan–sodium alginate nanofiber network via desolvation and electrostatic crosslinking,
Hao Zhuo   +5 more
wiley   +1 more source

Club Activity, Study Groups, and Academic Achievement: A Nationwide Study of Japanese Medical Students' Extracurricular Life. [PDF]

open access: yesJ Gen Fam Med
Fujikawa H   +10 more
europepmc   +1 more source

Impact of Oxygen Plasma Pre‐Treatment on Thermal Oxidation and Reliability of SiO2 on 4H‐SiC

open access: yesAdvanced Materials Interfaces, EarlyView.
We investigate how oxygen plasma pre‐treatment affects the thermal oxidation of silicon carbide. While plasma modification increases growth rates by 84%, it reduces dielectric breakdown strength by 18%. Our findings reveal that although plasma improves the interface state density, it introduces structural damage, highlighting a critical trade‐off ...
Chezhiyan Nanjappan   +3 more
wiley   +1 more source

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