Results 181 to 190 of about 20,335 (199)

Machine‐Learning‐Assisted Understanding of Depth‐Dependent Thermal Conductivity in Lithium Niobate Induced by Point Defects

open access: yesAdvanced Electronic Materials, EarlyView.
Thermal conductivity, a fundamental property of lithium niobate, plays a pivotal role in determining its device performance. By integrating experiments with machine‐learning‐assisted simulations, this study demonstrates that oxygen vacancies induced by thermal reduction result in a pronounced suppression of thermal conductivity and a marked depth ...
Yunjia Bao   +7 more
wiley   +1 more source

Acoustic Enhancement Performance of Hierarchical ZSM-5 Zeolites with Different Si/Al Ratios. [PDF]

open access: yesNanomaterials (Basel)
Guo M   +8 more
europepmc   +1 more source

Encapsulated Organohydrogel Couplants for Wearable Ultrasounds

open access: yesAdvanced Electronic Materials, EarlyView.
Hydrogels are ideal for wearable ultrasonic devices but suffer from water loss during long‐term monitoring. Adding excessive glycerol increases attenuation, while elastomer encapsulation causes uneven interfaces due to shrinkage and scattering acoustic waves.
Xiaoru Dong   +7 more
wiley   +1 more source

ULF Multi‐Key Tunable Magnetoelectric Antenna Array with Enhanced Communication Data Rate

open access: yesAdvanced Electronic Materials, EarlyView.
This work presents a reconfigurable magnetoelectric antenna with a dual‐asymmetric cantilever structure. By adjusting its fixed boundary conditions, the antenna's resonant frequency is tunable over a 500 Hz range within the ultra‐low‐frequency (ULF) band.
Qianshi Zhang   +7 more
wiley   +1 more source

CH3O‐PEABr Passivated Quasi‐2D Perovskite BA2Cs4Pb5Br16 Thin Film for Green Light‐Emitting Diodes

open access: yesAdvanced Electronic Materials, EarlyView.
Green quasi‐2D perovskite LEDs based on CH3O‐PEABr modified BA2Cs4Pb5Br16 films achieve a peak EQE of 19.47%. The suppressed defect density enables high‐performance electroluminescence, offering a scalable strategy for efficient and durable electroluminescent devices.
Yuxin Liu   +5 more
wiley   +1 more source

On the Enhanced p‐Type Performance of Back‐Gated WS2 Devices

open access: yesAdvanced Electronic Materials, EarlyView.
A scalable method for directly growing WS2 enables robust and persistent p‐type behavior in back‐gated FETs, independent of metal contacts, thickness, or ambient conditions. Electrical measurements reveal minimal Schottky barrier heights and stable thermionic transport, while first‐principles simulations suggest tungsten vacancies or WO3 species as the
Carlos Marquez   +14 more
wiley   +1 more source

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