Results 191 to 200 of about 188,504 (277)

Direct Observation of Suppressed Optical–Acoustic Phonon Energy Coupling in Supported SWCNT at Cryogenic Temperatures

open access: yesAdvanced Science, EarlyView.
This study quantifies the temperature‐dependent optical–acoustic phonon coupling factor (GOA) in supported single‐walled carbon nanotubes, revealing significant suppression at low temperatures. At high temperatures, GOA increases monotonically and is attributed to intensified anharmonic phonon interactions. This research offers key insights into phonon
Ibrahim Al Keyyam   +5 more
wiley   +1 more source

Layer‐By‐Layer Approach to Improve the Capacitance of Conducting Polymer Films

open access: yesAdvanced Electronic Materials, EarlyView.
This work describes the synthesis and characterization of a composite material based on poly(3,4‐ethylenedioxythiophene) (PEDOT) and poly(3,4‐ethylenedioxypyrrole) (PEDOP) deposited in a layer‐by‐layer approach. Due to the developed electroactive area coming from the presence of 3D nanostructures, PEDOT/PEDOP demonstrates superior areal capacitance ...
Małgorzata Skorupa   +6 more
wiley   +1 more source

Research on Drive and Detection Technology of CMUT Multi-Array Transducers Based on MEMS Technology. [PDF]

open access: yesMicromachines (Basel)
Li C   +11 more
europepmc   +1 more source

ULF Multi‐Key Tunable Magnetoelectric Antenna Array with Enhanced Communication Data Rate

open access: yesAdvanced Electronic Materials, EarlyView.
This work presents a reconfigurable magnetoelectric antenna with a dual‐asymmetric cantilever structure. By adjusting its fixed boundary conditions, the antenna's resonant frequency is tunable over a 500 Hz range within the ultra‐low‐frequency (ULF) band.
Qianshi Zhang   +7 more
wiley   +1 more source

On the Enhanced p‐Type Performance of Back‐Gated WS2 Devices

open access: yesAdvanced Electronic Materials, EarlyView.
A scalable method for directly growing WS2 enables robust and persistent p‐type behavior in back‐gated FETs, independent of metal contacts, thickness, or ambient conditions. Electrical measurements reveal minimal Schottky barrier heights and stable thermionic transport, while first‐principles simulations suggest tungsten vacancies or WO3 species as the
Carlos Marquez   +14 more
wiley   +1 more source

A Strategic Approach for Enhanced p‐Type Doping of WSe2 p‐MOSFETs Using an Atomic Oxidation Process

open access: yesAdvanced Electronic Materials, EarlyView.
A robust approach to p‐type doping in monolayer WSe2 is demonstrated using phase‐engineered WSeyOx / WSe2 / WSeyOx heterostructures formed via atomic oxidation. Self‐limited surface oxidation enables non‐destructive charge transfer doping while preserving intrinsic channel properties.
Dongjea Seo   +10 more
wiley   +1 more source

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