Results 221 to 230 of about 126,743 (307)
A deep learning inverse‐design framework is established to create versatile reconfigurable terahertz metadevices. By synergizing deep learning with phase‐change materials, this approach enables on‐demand customization of multidimensional electromagnetic responses.
Yisheng Dong +11 more
wiley +1 more source
Deep Learning-Based Cardiac Chamber Segmentation in Magnetic Resonance-Guided Adaptive Radiation Therapy. [PDF]
Chen X +16 more
europepmc +1 more source
Adaptive Radiation and Classification of the Proboscidea
openaire +3 more sources
A double‐sided mechanical interlocking strategy is developed to create robust electrical contact between polymer electrode and metal interconnect. The fibrous structure enables formation of thread–hole adhesion, which only breaks under bulk failure and achieves a record high interfacial energy exceeding 730 J·m−2. This adhesion secures the integrity of
Gang Li +6 more
wiley +1 more source
Phylogenomics of the tetraploid Hawaiian lobeliads: Implications for their origin, dispersal history, and adaptive radiation. [PDF]
Rose JP +9 more
europepmc +1 more source
Polymer electrolytes (PEs) are often indiscriminately grouped as “solid polymer electrolytes (SPEs)”, despite fundamental differences in their ion‐transport mechanisms. This Perspective establishes a mechanism‐based framework that distinguishes gel, quasi‐solid, and all‐solid polymer electrolytes based on their dominant ion‐transport pathways.
Jing Chen +15 more
wiley +1 more source
Dosimetric evaluations using cycle-consistent generative adversarial network synthetic CT for MR-guided adaptive radiation therapy. [PDF]
Asher GL +10 more
europepmc +1 more source
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci +12 more
wiley +1 more source

