Results 241 to 250 of about 88,513 (307)

Domain Wall Rebounds Driven by Competing Entropic and Spin‐Transfer Torques in Cylindrical Nanowires

open access: yesAdvanced Functional Materials, EarlyView.
Domain‐wall motion in cylindrical magnetic nanowires driven by nanosecond current pulses. Low current densities efficiently displace domain walls, whereas higher currents cause rebound at the wire ends. The effect results from the interplay between spin‐transfer torque and thermally induced processes, highlighting the role of thermal gradients in ...
Elias Saugar   +11 more
wiley   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Biomimetic Nanovaccine Integrating Dendritic Cell Exosomes with Tumor Cell Membranes for Sustained Prophylaxis Against Glioblastoma

open access: yesAdvanced Functional Materials, EarlyView.
We have developed DEX/GM, an all‐natural, personalizable hybrid vaccine designed by coating dendritic cell‐derived exosomes (DEX) onto tumor cell membranes (GM) for sustained prophylaxis against glioblastoma (GBM). ABSTRACT Glioblastoma (GBM), one of the most aggressive and lethal brain tumors, remains incurable with a poor clinical prognosis.
Shanshan Li   +6 more
wiley   +1 more source

Residential green space, air pollution, and related metabolites in association with depression among cancer survivors. [PDF]

open access: yesNat Commun
Zhao J   +12 more
europepmc   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

open access: yesAdvanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee   +16 more
wiley   +1 more source

2D Magnetic and Topological Quantum Materials and Devices for Ultralow Power Spintronics

open access: yesAdvanced Functional Materials, EarlyView.
2D magnets and topological quantum materials enable ultralow‐power spintronics by combining robust magnetic order with symmetry‐protected, Berry‐curvature‐driven transport. Fundamentals of 2D anisotropy and spin‐orbit‐coupling induced band inversion are linked to scalable growth and vdW stacking.
Brahmdutta Dixit   +5 more
wiley   +1 more source

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