Results 261 to 270 of about 5,919,808 (365)

Three‐dimensional Antimony Sulfide Based Flat Optics

open access: yesAdvanced Functional Materials, EarlyView.
This work presents the development of a grayscale electron beam lithography (g‐EBL) method for fabricating antimony trisulfide (Sb2S3) nanostructures with customizable 3D profiles. The refractive index of g‐EBL patterned Sb2S3 is determined based on the synergy of genetic algorithm and transfer matrix method.
Wei Wang   +18 more
wiley   +1 more source

Applications of AI/ML in Maritime Cyber Supply Chains

open access: diamond
Rafael Dı́az   +5 more
openalex   +1 more source

‘Oxygen Bound to Magnesium’ as High Voltage Redox Center Causes Sloping of the Potential Profile in Mg‐Doped Layered Oxides for Na‐Ion Batteries

open access: yesAdvanced Functional Materials, EarlyView.
Na‐ion batteries ‐ Impact of doping on the oxygen redox: The sloping potential of NaMg0.1Ni0.4Mn0.5O2 above 4.0 V is caused by a new redox center (arising from the ‘O bound to Mg’), having a higher potential but being more irreversible compared to the ‘O bound to Ni’.
Yongchun Li   +12 more
wiley   +1 more source

EA-CNN: Enhanced attention-CNN with explainable AI for fruit and vegetable classification

open access: gold
Zeshan Aslam Khan   +8 more
openalex   +1 more source

Modulating Surface‐Active Hydrogen for Facilitating Nitrate‐to‐Ammonia Electroreduction on Layered Double Hydroxides Nanosheets

open access: yesAdvanced Functional Materials, EarlyView.
The NiCuFe‐layered double hydroxides nanosheets are synthesized for facilitating nitrate‐to‐ammonia with a high ammonia yield of 1.64 mmol h−1 cm−2, Faradaic efficiency of 94.8% and stability for 15 cycles. The assembled Zn‐nitrate battery delivers a remarkable power density of 12.4 mW cm−2.
Bin Liu   +9 more
wiley   +1 more source

Universal Neuromorphic Element: NbOx Memristor with Co‐Existing Volatile, Non‐Volatile, and Threshold Switching

open access: yesAdvanced Functional Materials, EarlyView.
A W/NbOx/Pt memristor demonstrates the coexistence of volatile, non‐volatile, and threshold switching characteristics. Volatile switching serves as a reservoir computing layer, providing dynamic short‐term processing. Non‐volatile switching, stabilized through ISPVA, improves reliable long‐term readout. Threshold switching operates as a leaky integrate
Ungbin Byun, Hyesung Na, Sungjun Kim
wiley   +1 more source

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