Results 221 to 230 of about 547,292 (342)

Engineered PN MoS2-Al2O3-Based Photodiode Device for High-Performance NIR LiDAR and Sensing Applications. [PDF]

open access: yesSensors (Basel)
Abdelhady A Khalil A   +7 more
europepmc   +1 more source

Nanoscopic Imaging the Lithiation of Sulfur Nanoparticles under Electron Beam Irradiation

open access: yesAdvanced Science, EarlyView.
ABSTRACT In situ Transmission Electron Microscopy (TEM) provides powerful insights into the reaction mechanisms of Lithium‐Sulfur (Li‐S) batteries. However, distinguishing intrinsic electrochemical behaviors from artifacts induced by high‐energy electron beam irradiation remains a critical challenge.
Rui Huang   +13 more
wiley   +1 more source

Low‐Voltage and High‐k Properties of Bilayer HZO Capacitors at the Morphotropic Phase Boundary for Next‐Generation Memory Applications

open access: yesAdvanced Science, EarlyView.
The HfxZr1‐xO2‐based ferroelectric/antiferroelectric bilayer capacitor exhibits morphotropic‐phase‐boundary behavior with a high dielectric constant (∼52) at 2 V. Phase engineering stabilizes o/t‐phase coexistence and suppresses m‐phase formation, enabling capacitance enhancement and self‐optimization under cycling for scalable low‐voltage, high‐κ ...
Junseok Kim   +5 more
wiley   +1 more source

Transmission of Radio‐Frequency Waves and Nuclear Magnetic Resonance in Lanthanum Superhydrides

open access: yesAdvanced Science, EarlyView.
1H NMR and radio‐frequency transmission measurements of lanthanum superhydrides at 165 GPa reveals a transition at 260–280 K by a strong suppression of the signal intensity, significant changes in NMR spectra, including a dramatic decrease of the relaxation rate 1/T1T, and pronounced shielding effect, which may have a superconducting nature.
Dmitrii V. Semenok   +8 more
wiley   +1 more source

The Origin of Efficiency in III‐Nitride Micro‐Light‐Emitting Diodes

open access: yesAdvanced Science, EarlyView.
The images show panchromatic cathodoluminescence of III‐V materials, which reveal that AlGaInP red wafers, having fewer defects, support longer carrier diffusion lengths. Meanwhile, the density of defects increases with longer emission wavelengths in the InGaN system, illustrating how generated carriers pass through the material and how defects limit ...
Jeong‐Hwan Park   +11 more
wiley   +1 more source

Reconfigurable, Temperature Resilient Phase‐Change Metasurfaces Fabricated via High Throughput Nanoimprinting Lithography

open access: yesAdvanced Science, EarlyView.
ABSTRACT The combination of metasurfaces with chalcogenide phase‐change materials is a highly promising route toward the development of multifunctional and reconfigurable nanophotonic devices. However, their transition into real‐world devices is hindered by several technological challenges. This includes, amongst others, the lack of large area photonic
Carlota de Ruiz de Galarreta   +8 more
wiley   +1 more source

Home - About - Disclaimer - Privacy