Results 61 to 70 of about 10,282 (261)

Noise‐Limited Bit Precision in Ferroelectric Synaptic Transistors for High‐Resolution Neuromorphic Computing

open access: yesAdvanced Functional Materials, EarlyView.
Low‐frequency noise spectroscopy defines the resolvable conductance states of synaptic FeFETs by coupling read‐current fluctuation with usable dynamic range. The resulting noise‐limited bit precision establishes a universal, device‐agnostic reliability metric beyond the memory window, enabling quantitative benchmarking and rational design of high ...
Jaehong Park   +12 more
wiley   +1 more source

Pair of Associated η-Ricci–Bourguignon Almost Solitons with Vertical Torse-Forming Potential on Almost Contact Complex Riemannian Manifolds

open access: yesMathematics
Each of the studied manifolds has a pair of B-metrics, interrelated by an almost contact structure. The case where each of these metrics gives rise to an η-Ricci–Bourguignon almost soliton, where η is the contact form, is studied.
Mancho Manev
doaj   +1 more source

Beta-almost Ricci solitons on Sasakian 3-manifolds

open access: yesCubo, 2019
In this paper we characterize the Sasakian 3-manifolds admitting β-almost Ricci solitons whose potential vector field is a contact vector field. Among others we prove that a β-almost Ricci soliton whose potential vector field is a contact vector field on
Pradip Majhi, Debabrata Kar
doaj   +1 more source

An Electrowetting Pump

open access: yesAdvanced Functional Materials, EarlyView.
A tubular electrowetting pump moves alternating droplets through a millimeter‐wide channel in discrete, reversible steps, functioning as a fluidic stepper motor. With no moving parts and electrodes insulated from the liquid, it delivers silent, accurate flow. Flexibility allows the pump to be woven directly into textiles for wearable, medical, and soft‐
Robert Hennig, Herbert Shea
wiley   +1 more source

Ricci–Bourguignon Almost Solitons with Vertical Torse-Forming Potential on Almost Contact Complex Riemannian Manifolds

open access: yesMathematics
Almost contact complex Riemannian manifolds, also known as almost contact B-metric manifolds, are equipped with Ricci–Bourguignon-like almost solitons.
Mancho Manev
doaj   +1 more source

Almost contact metric 3-submersions

open access: yesInternational Journal of Mathematics and Mathematical Sciences, 1984
An almost contact metric 3-submersion is a Riemannian submersion, π from an almost contact metric manifold (M4m+3,(φi,ξi,ηi)i=13,g) onto an almost quaternionic manifold (N4n,(Ji)i=13,h) which commutes with the structure tensors of type (1,1);i.e., π*φi ...
Bill Watson
doaj   +1 more source

Contact metric manifolds with large automorphism group and (κ, µ)-spaces

open access: yesComplex Manifolds, 2019
We discuss the classifiation of simply connected, complete (κ, µ)-spaces from the point of view of homogeneous spaces. In particular, we exhibit new models of (κ, µ)-spaces having Boeckx invariant -1.
Lotta Antonio
doaj   +1 more source

Sulfation‐Tunable Peptide‐Glycosaminoglycan Hydrogels for Hematopoietic Stem and Progenitor Cell Expansion

open access: yesAdvanced Functional Materials, EarlyView.
Co‐assembly of rationally designed glycosaminoglycan‐binding peptides with sulfated glycosaminoglycans yields supramolecular hydrogels with tunable mechanics and matrix‐mediated cytokine retention. The glycosaminoglycans thereby act as cofactors, driving a coil‐to‐β‐sheet transition that triggers gelation.
Shirel Veretnik   +8 more
wiley   +1 more source

Disentangling Bulk and Surface Contributions to Charge and Discharge Fading in High‐Voltage LiCoO2

open access: yesAdvanced Functional Materials, EarlyView.
High‐voltage operation of LiCoO2 accelerates capacity fading through bulk and surface degradation. By introducing a LiTaO3 coating to selectively suppress surface degradation, bulk and surface contributions to charge and discharge fading are decoupled.
Hyungjoon Moon   +6 more
wiley   +1 more source

Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing

open access: yesAdvanced Functional Materials, EarlyView.
A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin   +7 more
wiley   +1 more source

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