Results 241 to 250 of about 93,397 (307)

A High-PSRR LDO with Low Noise and Ultra-Low Power Consumption. [PDF]

Micromachines (Basel)
Guo N, Cheng J, Yue C, Chen C, Liu C, Dong L.   +5 more
europepmc   +1 more source

LightIN: a versatile silicon-integrated photonic field programmable gate array with an intelligent configuration framework for next-generation AI clusters. [PDF]

Light Sci Appl
Zhu Y, Liu Y, Yang X, Liu K, Hua X, Luo M, Liu J, Chang S, Yan J, Zhang S, Wu M, Wang Z, Zhang H, Wang D, Chen D, Xiao X, Yu S.   +16 more
europepmc   +1 more source

Matching Network Design for Ultrasonic Guided Wave Interdigital Transducers. [PDF]

Sensors (Basel)
Capineri L.
europepmc   +1 more source

Terahertz Amplification Induced by Electron-Phonon Interactions in Gated Graphene Plasmonic System. [PDF]

Research (Wash D C)
Qiu Z, Yang S, Huang S, Wang S, Zhang P, Gong Y.   +5 more
europepmc   +1 more source

Spatial control of doping in conducting polymers enables complementary, conformable, implantable internal ion-gated organic electrochemical transistors. [PDF]

Nat Commun
Wisniewski DJ, Ma L, Rauhala OJ, Cea C, Zhao Z, Ranschaert A, Gelinas JN, Khodagholy D.   +7 more
europepmc   +1 more source

A one-transistor organic electrochemical self-sustained oscillator model for neuromorphic networks.

Newton
Bisquert J, Tessler N.
europepmc   +1 more source

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Performance of electron beam-semiconductor amplifiers

IEEE Transactions on Electron Devices, 1971
Experimental results obtained with developmental electron beam-semiconductor devices used as video-pulse and RF pulsed amplifiers are discussed. These devices employ a grid-modulated electron beam to control the current in a semiconductor target. Power gains of 26 dB and peak pulse powers of 40 W were obtained at up to 600 MHz with an untuned output ...
G. Taylor, R. True, H. Wagner
openaire   +1 more source