Results 71 to 80 of about 18,620 (232)
DNA strands are employed both as dynamic linkers and nanoscale templates for the integration of Ag2S nanoparticles on MoS2, which in turn imparted photothermal responsiveness; this feature permits the selective cargo (fluorophore, quantum dots or an enzyme) release from the MoS2 surface in response to local heat induced by light irradiation.
Kai Chen +3 more
wiley +1 more source
Ferroelectricity in thin HfO2‐based films offers great possibilities for next‐generation neuromorphic memory devices. There, the response to subcoercive voltage signals is driven by the movement of mobile interfaces and their interaction with crystal defects – a yet rather unexplored aspect, which we shed light on and gain new insights into the complex
Maximilian T. Becker +11 more
wiley +1 more source
A MOS cursive-character generator [PDF]
Cursive characters can be made to be more readable, more attractive, and better suited to the operation of graphic CRT terminals than the usual dot-matrix type; a system using cursive-type characters achieves much higher writing rate while requiring ...
Cheng, Edmund K., Mead, Carver A.
core
Digital Actuation Control of Soft Robotic Origami With Self‐Folding Liquid Crystal Elastomer Hinges
Self‐folding soft‐rigid hybrid robotic origami is enabled by liquid crystal elastomer actuators with embedded Joule heating and closed‐loop digital control. Digitally addressable hinges provide reversible and programmable transitions between distinct folded states while maintaining actuation performance at high cycle counts (over 1500).
David C. Bershadsky +3 more
wiley +1 more source
Domain Wall Rebounds Driven by Competing Entropic and Spin‐Transfer Torques in Cylindrical Nanowires
Domain‐wall motion in cylindrical magnetic nanowires driven by nanosecond current pulses. Low current densities efficiently displace domain walls, whereas higher currents cause rebound at the wire ends. The effect results from the interplay between spin‐transfer torque and thermally induced processes, highlighting the role of thermal gradients in ...
Elias Saugar +11 more
wiley +1 more source
Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee +16 more
wiley +1 more source
New possibilities in the design of analog integrated circuit with MOS-C realization
132
openaire +1 more source
Low-Voltage Ultra-Low-Power Current Conveyor Based on Quasi-Floating Gate Transistors [PDF]
The field of low-voltage low-power CMOS technology has grown rapidly in recent years; it is an essential prerequisite particularly for portable electronic equipment and implantable medical devices due to its influence on battery lifetime.
Khateb, F., Khatib, N., Kubanek, D.
core +1 more source
Polymorph engineering in ErMnO3 enables low‐voltage, forming‐free threshold switching with tunable negative differential resistance. Conducting orthorhombic regions embedded in an insulating hexagonal matrix provide controlled Joule‐heating‐enhanced Poole–Frenkel transport. The hexagonal phase prevents excessive heating and breakdown.
Rong Wu +8 more
wiley +1 more source
Regiorandom Polythiophenes for Fully Stretchable Electrochemical Transistors and Logic Circuits
Regiorandom (RRa) polythiophenes, once regarded as unsuitable for electronics, exhibit exceptional switching performance via volumetric electrochemical doping. Optimized RRa‐based organic electrochemical transistors (OECTs) achieve a high on/off ratio (≈104), stable operation under 200% strain, and enable fully stretchable logic gates, demonstrating ...
Dong Hyun Park +6 more
wiley +1 more source

