Results 171 to 180 of about 648,122 (330)

Discovery of an Intrinsic Antiferromagnetic Semiconductor EuSc2Te4 With Magnetism‐Driven Nonlinear Transport

open access: yesAdvanced Functional Materials, EarlyView.
EuSc₂Te₄, an antiferromagnetic semiconductor, exhibits a nonlinear Hall effect (NLHE) characterized by quadratic current–voltage behavior. Combined experimental and theoretical studies reveal that this NLHE is linked to its antiferromagnetism and involves contributions from the quantum metric.
Seng Huat Lee   +15 more
wiley   +1 more source

Switching of Magnetic Order via Non‐Magnetic Al Addition in FeCoNiMnAlx Films

open access: yesAdvanced Functional Materials, EarlyView.
Non‐magnetic Al addition provides a sensitive handle to switch the magnetic order in high entropy FeCoNiMnAlx thin films via fcc to bcc phase transformation. Films with fcc structure exhibit a large exchange bias, while bcc films exhibit enhanced ferromagnetic properties, reflecting the magnetic ground state of Mn which switches from antiferromagnetic ...
Willie B. Beeson   +6 more
wiley   +1 more source

Self‐Poled Halide Perovskite Ruddlesden‐Popper Ferroelectric‐Photovoltaic Semiconductor Thin Films and Their Energy Harvesting Properties

open access: yesAdvanced Functional Materials, EarlyView.
Low‐dimensional halide perovskite thin films, (BA)2(MA)n‐1PbnBr3n+1 (n = 1, 2), exhibit both semiconducting and ferroelectric properties, enabling mechanical and light energy harvesting. Using Cr/Cr₂O₃ or PCBM as barrier layers ensures reproducible ferroelectricity.
Raja Sekhar Muddam   +8 more
wiley   +1 more source

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