Results 161 to 170 of about 10,504,105 (298)
Mn‐Substituted Topological Phase Transition in Topological Insulator Pt2HgSe3
Advanced Electronic Materials, EarlyView.ABSTRACT Topological materials have gained a significant interest in recent years due to their unique features, leading to topological insulators (TI), Dirac or Weyl semimetals, etc. The layered material Pt2HgSe3${\rm Pt}_2{\rm HgSe}_3$ is found to be a dual TI characterized by significant spin–orbit coupling and band inversion.
Deergh Bahadur Shahi +4 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.A one‐pot solvothermal reaction yields Bi2Te3 nanoplate/Te nanorod composites, in which the antimony precursor regulates crystallite size without lattice incorporation. Drop‐cast flexible films reach Seebeck coefficients of −127 and 323 µV K−1 at 393 K, and a flexible thermoelectric generator produces 6.2 mV at a temperature difference of 5.6 K ...
Keisuke Kaneko +6 more
wiley +1 more source
Gate-tunable anomalous Hall effect in Bernal tetralayer graphene. [PDF]
Nat Commun, 2023 Chen H, Arora A, Song JCW, Loh KP.
europepmc +1 more source
Advanced Energy Materials, EarlyView.The molecular design strategy that integrates both side chain and backbone engineering in diketopyrrolopyrrole‐based conjugated polymers to identify the optimal balance between doping efficiency and microstructural order is demonstrated. Comprehensive spectroscopic, electrochemical, morphological, and structural characterizations reveal that the ...
Taewoong Han +13 more
wiley +1 more source
Advanced Intelligent Systems, Volume 7, Issue 3, March 2025.This review aims to provide a broad understanding for interdisciplinary researchers in engineering and clinical applications. It addresses the development and control of magnetic actuation systems (MASs) in clinical surgeries and their revolutionary effects in multiple clinical applications.
Yingxin Huo +3 more
wiley +1 more source
Localization corrections to the anomalous Hall effect in a ferromagnet
, 2020 We calculate the localization corrections to the anomalous Hall conductivity related to the contribution of spin-orbit scattering into the current vertex ͑side-jump mechanism͒.
P Bruno, A Crépieux, V K Dugaev
core
Predicting Performance of Hall Effect Ion Source Using Machine Learning
Advanced Intelligent Systems, Volume 7, Issue 3, March 2025.This study introduces HallNN, a machine learning tool for predicting Hall effect ion source performance using a neural network ensemble trained on data generated from numerical simulations. HallNN provides faster and more accurate predictions than numerical methods and traditional scaling laws, making it valuable for designing and optimizing Hall ...
Jaehong Park +8 more
wiley +1 more source
Exploiting Ferroelectric and Spintronic Dynamics for Neural Network Computation
Advanced Intelligent Systems, EarlyView.Ferroelectric and spintronic devices, relying on the control of polarization and magnetization, offer intrinsically fast, durable, energy‐efficient, and low‐latency building blocks for analog in‐memory computing. The hysteretic dynamics of an order parameter are leveraged to provide nonvolatile, multistate memory and nonlinear switching. Brain‐inspired
Dashiell Harrison +4 more
wiley +1 more source
Emergent zero-field anomalous Hall effect in a reconstructed rutile antiferromagnetic metal. [PDF]
Nat Commun, 2023 Wang M +13 more
europepmc +1 more source
Decoupled Spin Hall Voltage Readout for Domain‐Wall Synapses in Embedded Neuromorphic Computing
Advanced Intelligent Systems, EarlyView.Magnetic domain‐wall synapses provide nonvolatile multilevel states with linear, symmetric weight updates, making them attractive for neuromorphic hardware. However, DW MTJ readout has magnetoresistance‐limited dynamic range, while anomalous‐Hall readout suffers from weak voltage output and read/write coupling.
Stanislav Sin +2 more
wiley +1 more source