Results 221 to 230 of about 7,972 (262)
Proximity Induced Magnetic Anisotropy and Trefoil Fermiology in Monolayer FeCl2/Bi(111)
Reorientation of magnetic anisotropy in a 2D van der Waals magnet is demonstrated in monolayer FeCl2 epitaxially grown on a bismuth substrate, from its natural out‐of‐plane direction to a predominantly in‐plane orientation. The FeCl2/bismuth heterostructure exhibits moiré‐induced interface states, suggesting strong coupling at the interface.
Shigemi Terakawa +18 more
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A thin topological insulator (Bi2Te3) inserted between two single magnetic septuple layers of MnBi2Te4 is shown to convert the intrinsic antiferromagnetic interlayer coupling into robust ferromagnetism. As the Bi2Te3 spacer thickness increases from 1 to 4 quintuple layers, the weakening coercivity, Curie temperature, and interlayer coupling reveal ...
Enayet Hossain +10 more
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Origins of Graphite Resistivity: Decoupling Stacking Fault and Rotational Misorientation
Interfacial dislocations critically influence interlayer transport in van der Waals (vdW) materials, yet quantifying their individual contributions remains challenging. We measure graphite's c‐axis resistivity and develop a decoupling strategy, revealing a resistivity ratio of ∼4507:74:1 for rotational misorientations, stacking faults, and AB stacking,
Weipeng Chen +6 more
wiley +1 more source
Interlayer Dzyaloshinskii–Moriya Interaction in Synthetic Ferrimagnets for Spiking Neural Networks
This work introduces a groundbreaking integration of asymmetric magnetic structures (synthetic ferrimagnets) and antisymmetric magnetic interaction (interlayer Dzyaloshinskii–Moriya interaction) for the first time. It addresses the critical challenge of IL‐DMI detection and shows the discovery of unprecedented analog‐like spin‐orbit torque switching ...
Shen Li +14 more
wiley +1 more source
Leaky‐Integrate‐Fire Neuron via Synthetic Antiferromagnetic Coupling and Spin‐Orbit Torque
A spintronic leaky‐integrate‐and‐fire neuron is realized using Spin Orbit Torque driven domain‐wall motion for integration and synthetic antiferromagnetic coupling for the leaky process. The specialized Hall‐bar geometry enables controlled DW dynamics, achieving repeatable integration and firing events. This compact, CMOS‐compatible design highlights a
Badsha Sekh +8 more
wiley +1 more source
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Exchange‐Biased Quantum Anomalous Hall Effect
Advanced Materials, 2023AbstractThe quantum anomalous Hall (QAH) effect is characterized by a dissipationless chiral edge state with a quantized Hall resistance at zero magnetic field. Manipulating the QAH state is of great importance in both the understanding of topological quantum physics and the implementation of dissipationless electronics.
Peng Zhang +15 more
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Anomalous Hall effect in semiconductors
Solid State Communications, 1969Abstract The anomalous Hall effect due to the orbital magnetism has been investigated in a weakly doped semiconductor in the presence of a magnetic field. For a collisionless electron gas, we have calculated the conductivity tensor and (besides the usual Hall effect) we have obtained an anomalous current proportional to E × M We find that ...
Antoine J.F. Bastin +2 more
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Physics Today, 1979
The Hall effect is observed when a magnetic field is applied to a metal through which a current flows: The current carriers are deflected in the field, giving rise to a transverse electric field. In a ferromagnetic metal the embedded magnetic moments produce an anomalous Hall effect.
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The Hall effect is observed when a magnetic field is applied to a metal through which a current flows: The current carriers are deflected in the field, giving rise to a transverse electric field. In a ferromagnetic metal the embedded magnetic moments produce an anomalous Hall effect.
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2018
The anomalous Hall effect (AHE) is one of the most fundamental, practically important and for a long time most enigmatic phenomena exhibited by magnetic materials. Here, we briefly outline the relation of the anomalous Hall effect to the geometric properties of the electronic states as given by the Berry phase.
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The anomalous Hall effect (AHE) is one of the most fundamental, practically important and for a long time most enigmatic phenomena exhibited by magnetic materials. Here, we briefly outline the relation of the anomalous Hall effect to the geometric properties of the electronic states as given by the Berry phase.
openaire +1 more source
Intrinsic photoinduced anomalous Hall effect
Physica E: Low-dimensional Systems and Nanostructures, 2010Abstract We have measured the intrinsic photoinduced anomalous Hall effect (PI-AHE) in very high mobility two-dimensional hole gases. In this new effect, similarly to both the spin and anomalous Hall effects, carriers with different spins are deflected to opposite sides of the sample by the spin–orbit interaction, thereby producing in this case a ...
D.A. Vasyukov +7 more
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