Results 61 to 70 of about 53,971 (223)

Anomalous Nernst Effect in Dirac Semimetal Cd3As2

open access: yes, 2017
Dirac and Weyl semimetals display a host of novel properties. In Cd$_3$As$_2$, the Dirac nodes lead to a protection mechanism that strongly suppresses backscattering in zero magnetic field, resulting in ultrahigh mobility ($\sim$ 10$^7$ cm$^2$ V$^{-1}$ s$
Cava, R. J.   +7 more
core   +1 more source

Heat flux sensing by anomalous Nernst effect in Fe–Al thin films on a flexible substrate [PDF]

open access: yesApplied Physics Express, 2020
We performed a numerical analysis of the material parameters required for realizing a heat flux sensor exploiting the anomalous Nernst effect (ANE). The results showed the importance of high thermopower of ANE (SANE) and small saturation magnetization ...
Weinan Zhou, Y. Sakuraba
semanticscholar   +1 more source

Development of a low-cost system for energy conversion coefficient measurements based on thermomagnetic phenomena [PDF]

open access: yesRevista Brasileira de Ensino de Física
This study presents the experimental development of a simple and low-cost system for measuring the thermomagnetic energy conversion based on the Anomalous Nernst Effect.
Caio M.R. Valença   +5 more
doaj   +1 more source

Ambi-polar anomalous Nernst effect in a magnetic topological insulator

open access: yesNew Journal of Physics, 2017
We report electromagnetic and thermomagnetic transport studies on a magnetic topological insulator thin film Cr _0.15 (Bi _0.1 Sb _0.9 ) _1.85 Te _3 grown by molecular beam epitaxy. The temperature and gate voltage dependence of the anomalous Hall effect
Minghua Guo   +8 more
doaj   +1 more source

Anomalous thermoelectric effects of ZrTe$_{5}$ in and beyond the quantum limit

open access: yes, 2019
Thermoelectric effects are more sensitive and promising probes to topological properties of emergent materials, but much less addressed compared to other physical properties.
Guo, C. Y.   +10 more
core   +1 more source

Anomalous Hall and Nernst effects in Kane fermions

open access: yesPhysical Review B, 2022
Kane fermions are characterized by a linear Dirac cone intersecting with a flat band, resembling a pseudo-spin-1 Dirac semimetal. Similar to relativistic Dirac fermions, Kane fermions satisfy a linear energy-momentum relation and can be classified as being pseudorelativistic. Unlike Dirac fermions, they are not protected by symmetry or by topology, but
Karun Gadge   +2 more
openaire   +2 more sources

Controllable anomalous Nernst effect in an antiperovskite antiferromagnet

open access: yes, 2022
Anomalous Nernst effect (ANE), the generation of a transverse electric voltage by a longitudinal temperature gradient, has attracted increasing interests of researchers recently, due to its potential in the thermoelectric power conversion and close relevance to the Berry curvature of the band structure.
You, Yunfeng   +8 more
openaire   +2 more sources

Anomalous Nernst and Hall effects in magnetized platinum and palladium

open access: yes, 2014
We study the anomalous Nernst effect (ANE) and anomalous Hall effect (AHE) in proximity-induced ferromagnetic palladium and platinum which is widely used in spintronics, within the Berry phase formalism based on the relativistic band structure ...
Guo, G. Y., Nagaosa, N., Niu, Q.
core   +1 more source

Topological thermoelectric effects in spin-orbit coupled electron and hole doped semiconductors [PDF]

open access: yes, 2012
We compute the intrinsic contributions to the Berry-phase mediated anomalous Hall and Nernst effects in electron- and hole-doped semiconductors in the presence of an in-plane magnetic field as well as Rashba and Dresselhaus spin orbit couplings. For both
Dumitrescu, E.   +3 more
core   +3 more sources

Magnetism and Nonlinear Charge Transport in NiFe2O4/γ‐Al2O3/SrTiO3 Heterostructure: Toward Spintronic Applications

open access: yesAdvanced Functional Materials, EarlyView.
In this report, we demonstrate that a crystalline phase of 52nm thick NiFe2O4 can be grown by RF sputtering on top of γ‐Al2O3(8nm)/SrTiO3 at a significantly low temperature (150 °C) without compromising the mobility and carrier density of the 2D electron gas at the γ‐Al2O3(8nm)/SrTiO3 interface.
Amit Chanda   +11 more
wiley   +1 more source

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