Results 301 to 310 of about 1,178,363 (355)

Understanding the superconductivity and charge density wave interaction through quasi-static lattice fluctuations. [PDF]

Proc Natl Acad Sci U S A
Porter Z, Shen L, Plumley R, Burdet NG, Petsch AN, Wen J, Drucker NC, Peng C, Chen XM, Fluerasu A, Blackburn E, Coslovich G, Hawthorn DG, Turner JJ.   +13 more
europepmc   +1 more source

Physical Reservoir Computing for Real‐Time Electrocardiogram Arrhythmia Detection Through Controlled Ion Dynamics in Electrochemical Random‐Access Memory

Advanced Electronic Materials, EarlyView.
This study presents an ECRAM‐based physical reservoir computing system for real‐time electrocardiogram arrhythmia detection. By optimizing electrolyte ionic conductivity and channel ionic diffusivity, it achieves including non‐linear dynamics, millisecond‐scale tunable retention, low‐power operation, and minimal variation.
Kyumin Lee, Dongmin Kim, Jongseon Seo, Hyunsang Hwang   +3 more
wiley   +1 more source

Fault Diagnosis in Chemical Reactors with Data-Driven Methods. [PDF]

Ind Eng Chem Res
Du P, Abdel Jabbar NM, Wilhite BA, Kravaris C.   +3 more
europepmc   +1 more source

Erratum to “Investigation of Pontryagin trace anomaly using Pauli-Villars regularization” [Nuclear Physics B 980 (2022) 115840]

Chang-Yong Liu
openalex   +1 more source

BiSbF2 Monolayer: A 2D Inversion‐Asymmetric Topological Insulator With Linearly Tunable Giant Spin‐Splitting and Bulk Gap

Advanced Electronic Materials, EarlyView.
The BiSbF2 monolayer is a 2D topological insulator with a large bandgap (252 meV) hosting topological edge states and giant valley‐contrasted spin‐splitting (478 meV). The sizable gap enables room‐temperature quantum spin Hall effects, while its coexisting topological and valleytronic features provide a versatile platform for exploring topological ...
Bin Geng, Hongli Xin, Xin Cui, Tielei Song, Zhifeng Liu   +4 more
wiley   +1 more source

Publisher Correction: Mapping the ionosphere with millions of phones. [PDF]

Nature
Smith J, Kast A, Geraschenko A, Morton YJ, Brenner MP, van Diggelen F, Williams BP.   +6 more
europepmc   +1 more source

Ultralow Electrical Current Driven Field‐Free Spin‐Orbit Torque Switching of Magnetic Tunnel Junctions by Topological Insulators

Advanced Electronic Materials, EarlyView.
A 3‐terminal SOT‐MRAM device that integrates the topological insulator and the perpendicular magnetic tunnel junction. The double magnetic layers with different saturation magnetizations are employed as the recording layer of TIs‐pMTJ. By breaking the chiral symmetry of these states via the interlayer DMI, the field‐free deterministic SOT switching is ...
Xu Zhang, Aitian Chen, Yifan Zhang, Zhaozhuo Zeng, Yaqin Guo, Dongxing Zheng, Baoshan Cui, Chuangwen Wu, Wenjie Song, Shuo Yang, Zijun Luo, Jingfeng Li, Gianluca Gubbiotti, Xiufeng Han, Jinkui Zhao, Peng Yan, Xufeng Kou, Xixiang Zhang, Hao Wu   +18 more
wiley   +1 more source

Nanosecond anomaly detection with decision trees and real-time application to exotic Higgs decays. [PDF]

Nat Commun
Roche ST, Bayer Q, Carlson BT, Ouligian WC, Serhiayenka P, Stelzer J, Hong TM.   +6 more
europepmc   +1 more source

Research on Resistive Switching Mechanism of SnO2/SnS2 Based Heterojunction Memory Devices

Advanced Electronic Materials, EarlyView.
This work fabricates SnO2/SnS2 RRAM using (NH4)4Sn2S6, achieving 224 pJ set energy at 0.4 V with >1000‐cycle stability and 4 × 104 s retention. XPS/SEM/AFM‐validated interfacial engineering enables uniform switching, advancing low‐power neuromorphic memory development.
WenBin Liu, Lifang Hu, RuoXuan Zhao, ZhiYong Hou, JinYu Tian   +4 more
wiley   +1 more source

Unsupervised machine learning model for detecting anomalous volumetric modulated arc therapy plans for lung cancer patients. [PDF]

Front Big Data
Huang P, Shang J, Fan Y, Hu Z, Dai J, Liu Z, Yan H.   +6 more
europepmc   +1 more source