Results 101 to 110 of about 684 (200)

antiferroelectric transition

, 2010
Citation: 'antiferroelectric transition' in the IUPAC Compendium of Chemical Terminology, 3rd ed.; International Union of Pure and Applied Chemistry; 2006. Online version 3.0.1, 2019. 10.1351/goldbook.A00392 • License: The IUPAC Gold Book is licensed under Creative Commons Attribution-ShareAlike CC BY-SA 4.0 International for individual terms. Requests
openaire   +1 more source

Recent progress of the exchange bias based on 2D van der Waals ferromagnet

InfoScience, EarlyView.
Ultrathin magnetic materials could help make smaller, energy‐efficient memories, but their magnetic states must remain stable and controllable. This review brings together recent research on exchange bias, a magnetic pinning effect in layered materials, and explains how interfaces and electrical, thermal or mechanical controls can tune it, with optical
Wajahat Ali, Shaojie Hu
wiley   +1 more source

Memristors Based on Ferroelectric Cu‐Deficient Copper Indium Thiophosphate for Multilevel Storage and Neuromorphic Computing

Small, EarlyView.
Different from CIPS with threshold switching behaviors, Cu‐deficient CIPS* shows stable non‐volatile digital and analog RS. Owing to the formation of metallic IPS at the LRS, CIPS* memristors demonstrate high ON/OFF ratio and endurance stability, which can be utilized to implement multilevel storage.
Mengdie Li, Yanyan He, Chengyang Wang, Weng Fu Io, Feng Guo, Wenjing Jie, Jianhua Hao   +6 more
wiley   +1 more source

Ultra‐Efficient Memristive Voltage‐Resistance Logic Framework With Integrated Readout Strategy Based on Hafnium Zirconium Oxide

Small Methods, EarlyView.
Spatiotemporal efficiency is a key concern in memristor‐based logic‐in‐memory architectures, where separate read operations to access resistance states fundamentally limit efficiency. This work demonstrates that logic outputs can be directly inferred from the intrinsic discharge dynamics of a two‐terminal memristive device.
Wonwoo Kho, Hyunjoo Hwang, Hyunjun Kim, Narim Lee, Dongjun Min, Dante Ahn, Jaeseok Kim, Chaerin Han, Dahee Jeong, Seho Cho, Minseo So, Hee Chul Lee, Seung‐Eon Ahn   +12 more
wiley   +1 more source

Elasticity‐Driven Periodic Polarization Patterns in a Chiral Ferroelectric Nematic Fluid

Advanced Materials, Volume 38, Issue 62, 6 November 2026.
Chiral polar ferroelectric nematic fluids exhibit spontaneous formation of stripe, square, and hexagonal polarization textures under confinement. Controlled by thickness and anchoring, these patterns produce spatially modulated nonlinear optical responses.
Anej Sterle, Peter Medle Rupnik, Luka Cmok, Aitor Erkoreka, Marta Lavrič, Natan Osterman, Calum J. Gibb, Jordan Hobbs, Josu Martinez‐Perdiguero, Richard J. Mandle, Alenka Mertelj, Nerea Sebastián   +11 more
wiley   +1 more source

Electric-field-induced antiferroelectric to ferroelectric phase transition in polycrystalline NaNbO 3

, 2020
Electric-field-induced phase transitions are the most important characteristics of antiferroelectric mate- rials. However, in several prototype antiferroelectrics, these transitions are irreversible and the origin of this behavior is poorly understood ...
Koruza, Jurij, Egert, Sonja, Zhang, Mao-Hua, Groszewicz, Pedro B., Fulanovic, Lovro, Molina-Luna, Leopoldo, Ding, Hui, Kleebe, Hans-Joachim, Egert, Sonja; id_orcid   +8 more
core   +1 more source

Antiferroelectric Oxide Thin-Films: Fundamentals, Properties, and Applications [PDF]

, 2023
Antiferroelectrics have received blooming interests because of a wide range of potential applications in energy storage, solid-state cooling, thermal switch, transducer, actuation, and memory devices.
Xu, Bin, Burkovsky, Roman G, Zhang, Tianfu, Das, Sujit, Wei, Xian-Kui, Liu, Chenhan, Si, Yangyang, Chen, Zuhuang   +7 more
core  

Temperature-dependent field-induced phase transition behavior in Pb(Yb1/2Nb1/2)O3-based antiferroelectrics

Journal of Materiomics
Complex lead-based perovskites with the general formula Pb(Bx'B1-x'')O3, represent an important class of antiferroelectrics beyond the prototypical PbZrO3 and NaNbO3.
Qing Li, Wei Deng, Tian-Ci Ma, Changhao Zhao, Mupeng Zheng, Lei Zhao, Qiong Wu, Chaofeng Wu, Fang-Zhou Yao, Wen Gong, Dragan Damjanovic, Mao-Hua Zhang   +11 more
doaj   +1 more source

ferroelectric (antiferroelectric) transition [PDF]

, 2014
Citation: 'ferroelectric (antiferroelectric) transition' in the IUPAC Compendium of Chemical Terminology, 3rd ed.; International Union of Pure and Applied Chemistry; 2006. Online version 3.0.1, 2019. 10.1351/goldbook.F02347 • License: The IUPAC Gold Book is licensed under Creative Commons Attribution-ShareAlike CC BY-SA 4.0 International for individual
openaire   +1 more source

Designing silver niobate-based relaxor antiferroelectrics for ultrahigh energy storage performance

Journal of Advanced Ceramics
AgNbO3 (AN) and modified AgNbO3 have been extensively investigated as promising lead-free antiferroelectric (AFE) energy storage materials. Previous studies have focused mainly on the use of an ion dopant at the A/B site to obtain a stabilized AFE phase;
Zhengdong Hu, Zhen Liu, Bing Han, Haonan Peng, Kai Dai, Zequan Xu, Zhengqian Fu, Zhigao Hu, Genshui Wang   +8 more
doaj   +1 more source