Results 11 to 20 of about 684 (200)

Design of antiferroelectric polarization configuration for ultrahigh capacitive energy storage via increasing entropy [PDF]

open access: yesNature Communications
Electric field induced antiferroelectric-ferroelectric phase transition is a double-edged sword for energy storage properties, which not only offers a congenital superiority with substantial energy storage density but also poses significant challenges ...
Yongxiao Zhou   +10 more
doaj   +3 more sources

Flexoelectricity in antiferroelectrics [PDF]

open access: yesApplied Physics Letters, 2018
Flexoelectricity (coupling between polarization and strain gradients) is a property of all dielectric materials that has been theoretically known for decades, but only relatively recently it has begun to attract experimental attention. As a consequence, there are still entire families of materials whose flexoelectric performance is unknown. Such is the
P. Vales-Castro   +5 more
openaire   +5 more sources

A unified perturbative approach to electrocaloric effects

open access: yesCommunications Materials, 2021
Theoretical treatments of electrocaloric effects, interesting for their potential use in refrigeration, are mostly case specific. Here, a perturbative approach provides a unified physical understanding of the normal and inverse electrocaloric response ...
Mónica Graf, Jorge Íñiguez
doaj   +2 more sources

Mimicking Antiferroelectrics with Ferroelectric Superlattices [PDF]

open access: yesAdvanced Materials
AbstractAntiferroelectric oxides are promising materials for applications in high‐density energy storage, solid‐state cooling, and negative capacitance devices. However, the range of oxide antiferroelectrics available today is rather limited. In this work, it is demonstrated that antiferroelectric properties can be electrostatically engineered in ...
Yin, Chunhai   +9 more
core   +6 more sources

Observation of negative capacitance in antiferroelectric PbZrO3 Films [PDF]

open access: yesNature Communications, 2021
The observation of negative capacitance effect is focused on the ferroelectrics, while the antiferroelectrics based on Landau switches may have negative capacitance effect.
Leilei Qiao   +9 more
doaj   +2 more sources

Relaxation approach to quantum-mechanical modeling of ferroelectric and antiferroelectric phase transitions [PDF]

open access: yesNature Communications
Ferroelectrics and antiferroelectrics are the electric counterparts of ferromagnets and antiferromagnets. These materials undergo temperature- and electric-field-induced phase transitions that give rise to their characteristic hysteresis loops.
Nikhilesh Maity   +7 more
doaj   +2 more sources

Coexisting Phases in NaNbO3 Thin Films Influenced by Epitaxial Strain and Size Effects [PDF]

open access: yesAdvanced Science
Antiferroelectrics are a promising class of materials for applications in capacitive energy storage and multi‐state memory, but comprehensive control of their functional properties requires further research.
Aarushi Khandelwal   +5 more
doaj   +2 more sources

Anomalous electrocaloric behaviors in (anti)ferroelectrics: a mini-review [PDF]

open access: yesFrontiers in Chemistry
Solid-state cooling, represented by the electrocaloric effect (ECE) in (anti)ferroelectric materials, has emerged as an alternative green refrigeration technology by virtue of its high efficiency and miniaturization and is expected to substitute ...
Feng Li   +4 more
doaj   +2 more sources

Design of hierarchical-heterostructure antiferroelectrics for ultrahigh capacitive energy storage [PDF]

open access: yesNature Communications
Electrostatic dielectric capacitors with high power density are the fundamental energy storage components in advanced electronic and electric power systems.
Liang Chen   +6 more
doaj   +2 more sources

High-performance van der Waals antiferroelectric CuCrP2S6-based memristors [PDF]

open access: yesNature Communications, 2023
Layered thio- and seleno-phosphate ferroelectrics, such as CuInP2S6, are promising building blocks for next-generation nonvolatile memory devices.
Yinchang Ma   +21 more
doaj   +2 more sources

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