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Antiferromagnetic spintronics [PDF]

open access: yesReviews of Modern Physics, 2018
Antiferromagnetic materials could represent the future of spintronic applications thanks to the numerous interesting features they combine: they are robust against perturbation due to magnetic fields, produce no stray fields, display ultrafast dynamics and are capable of generating large magneto-transport effects. Intense research efforts over the past
Baltz, V.   +5 more
openaire   +6 more sources

Spintronics in antiferromagnets [PDF]

open access: yesPhilosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences, 2011
Magnetic domains and the walls between are the subject of great interest because of the role they play in determining the electrical properties of ferromagnetic materials and as a means of manipulating electron spin in spintronic devices.
Ravi K. Kummamuru, Yeong-Ah Soh
openaire   +3 more sources

Controlling spin current polarization through non-collinear antiferromagnetism [PDF]

open access: yesNature Communications, 2019
The interconversion of charge and spin currents via spin-Hall effect is essential for spintronics. Energy-efficient and deterministic switching of magnetization can be achieved when spin polarizations of these spin currents are collinear with the ...
T. Nan   +22 more
semanticscholar   +1 more source

Antiferromagnetism in RuO2 as d -wave Pomeranchuk instability [PDF]

open access: yesPhysical review B, 2019
We present a computational study of antiferromagnetic transition in RuO$_2$. The rutile structure with the magnetic sublattices coupled by $\pi/2$-rotation leads to a spin-polarized band structure in the antiferromagnetic state, which gives rise to a $d$-
K. Ahn   +3 more
semanticscholar   +1 more source

Ortho-atomic projector assisted DFT+U study of room temperature Ferro- and antiferromagnetic Mn-doped TiO2 diluted magnetic semiconductor

open access: yesMaterials Research Express, 2022
Using ortho-atomic Hubbard-corrected density functional theory, we present magnetic properties, ferromagnetic transition temperature T _c , Neel temperature T _N , electronic structure, structural formation energy, and crystal structure of anatase (Ti ...
Wondimagegnehu Beshah Begna   +2 more
doaj   +1 more source

Efficient Electrical Spin Splitter Based on Nonrelativistic Collinear Antiferromagnetism.

open access: yesPhysical Review Letters, 2020
Spin-current generation by electrical means is among the core phenomena driving the field of spintronics. Using ab initio calculations we show that a room-temperature metallic collinear antiferromagnet RuO_{2} allows for highly efficient spin-current ...
R. González-Hernández   +6 more
semanticscholar   +1 more source

Antiferromagnetic Piezospintronics [PDF]

open access: yesAdvanced Electronic Materials, 2019
AbstractAntiferromagnets naturally exhibit three obvious advantages over ferromagnets for memory device applications: insensitivity to external magnetic fields, much faster spin dynamics (≈THz), and higher packing density due to the absence of any stray field.
Zhiqi Liu   +8 more
openaire   +2 more sources

Magnetoelectric Induced Switching of Perpendicular Exchange Bias Using 30-nm-Thick Cr2O3 Thin Film

open access: yesMagnetochemistry, 2021
Magnetoelectric (ME) effect is a result of the interplay between magnetism and electric field and now, it is regarded as a principle that can be applied to the technique of controlling the antiferromagnetic (AFM) domain state.
Yu Shiratsuchi   +3 more
doaj   +1 more source

Hybrid-Density Functional Calculations of Structural, Electronic, Magnetic, and Thermodynamic Properties of α-Cu2P2O7

open access: yesApplied Sciences, 2022
We present a comparative study (using PBE, PBE0, and HSE functionals) of electronic and atomic structure, magnetism, and phonon dispersion relations of α-Cu2P2O7. Four possible magnetic configurations are considered, FM, AFM-1, AFM-2, and AFM-3.
Xiaoyong Yang   +2 more
doaj   +1 more source

Synthetic antiferromagnetic spintronics [PDF]

open access: yesNature Physics, 2018
Spintronic and nanomagnetic devices often derive their functionality from layers of different materials and the interfaces between them. This is especially true for synthetic antiferromagnets - two or more ferromagnetic layers that are separated by metallic spacers or tunnel barriers and which have antiparallel magnetizations.
Rembert A. Duine   +6 more
openaire   +5 more sources

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