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Antiferromagnetic spintronics [PDF]
Antiferromagnetic materials could represent the future of spintronic applications thanks to the numerous interesting features they combine: they are robust against perturbation due to magnetic fields, produce no stray fields, display ultrafast dynamics and are capable of generating large magneto-transport effects. Intense research efforts over the past
Baltz, V.+5 more
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Spintronics in antiferromagnets [PDF]
Magnetic domains and the walls between are the subject of great interest because of the role they play in determining the electrical properties of ferromagnetic materials and as a means of manipulating electron spin in spintronic devices.
Ravi K. Kummamuru, Yeong-Ah Soh
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Controlling spin current polarization through non-collinear antiferromagnetism [PDF]
The interconversion of charge and spin currents via spin-Hall effect is essential for spintronics. Energy-efficient and deterministic switching of magnetization can be achieved when spin polarizations of these spin currents are collinear with the ...
T. Nan+22 more
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Antiferromagnetism in RuO2 as d -wave Pomeranchuk instability [PDF]
We present a computational study of antiferromagnetic transition in RuO$_2$. The rutile structure with the magnetic sublattices coupled by $\pi/2$-rotation leads to a spin-polarized band structure in the antiferromagnetic state, which gives rise to a $d$-
K. Ahn+3 more
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Using ortho-atomic Hubbard-corrected density functional theory, we present magnetic properties, ferromagnetic transition temperature T _c , Neel temperature T _N , electronic structure, structural formation energy, and crystal structure of anatase (Ti ...
Wondimagegnehu Beshah Begna+2 more
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Efficient Electrical Spin Splitter Based on Nonrelativistic Collinear Antiferromagnetism.
Spin-current generation by electrical means is among the core phenomena driving the field of spintronics. Using ab initio calculations we show that a room-temperature metallic collinear antiferromagnet RuO_{2} allows for highly efficient spin-current ...
R. González-Hernández+6 more
semanticscholar +1 more source
Antiferromagnetic Piezospintronics [PDF]
AbstractAntiferromagnets naturally exhibit three obvious advantages over ferromagnets for memory device applications: insensitivity to external magnetic fields, much faster spin dynamics (≈THz), and higher packing density due to the absence of any stray field.
Zhiqi Liu+8 more
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Magnetoelectric Induced Switching of Perpendicular Exchange Bias Using 30-nm-Thick Cr2O3 Thin Film
Magnetoelectric (ME) effect is a result of the interplay between magnetism and electric field and now, it is regarded as a principle that can be applied to the technique of controlling the antiferromagnetic (AFM) domain state.
Yu Shiratsuchi+3 more
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We present a comparative study (using PBE, PBE0, and HSE functionals) of electronic and atomic structure, magnetism, and phonon dispersion relations of α-Cu2P2O7. Four possible magnetic configurations are considered, FM, AFM-1, AFM-2, and AFM-3.
Xiaoyong Yang+2 more
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Synthetic antiferromagnetic spintronics [PDF]
Spintronic and nanomagnetic devices often derive their functionality from layers of different materials and the interfaces between them. This is especially true for synthetic antiferromagnets - two or more ferromagnetic layers that are separated by metallic spacers or tunnel barriers and which have antiparallel magnetizations.
Rembert A. Duine+6 more
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