Results 121 to 130 of about 225 (169)
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Heteroepitaxy of Antimonides on InP
2007 IEEE 19th International Conference on Indium Phosphide & Related Materials, 2007High-quality GaAsSb epitaxial layers lattice-matched to InP are required to construct ultra-highspeed (fT>500 GHz) InP/GaAsSb/InP double heterojunction bipolar transistors. The issues of achieving high-quality GaAsSb/InP heterostructures growth by gas source molecular beam epitaxy are reviewed.
K. Y. Cheng, Bing-Ruey Wu
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Strain Effect in Polycrystalline Films of Indium Antimonide and Gallium Antimonide
1971Information is given on the technique of fabricating semiconducting films of indium antimonide and gallium antimonide having p-type and n-type conduction. Studies of the strain effect and of the temperature dependence of the resistance of prototype strain gauges are reported.
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Piezoresistance of Cadmium Antimonide
physica status solidi (b), 1966AbstractA theoretical and experimental study is made of the piezoresistance of p‐ and n‐type CdSb. The stress applied along the three crystal axes produces a change in the resistivity of opposite sign. The proposed theory of nonequivalent valley Δ, Λ, and Σ, which follows from the low symmetry of the crystal, explains the observed effects in n‐type ...
K. D. Tovstyuk +3 more
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Superconducting indium antimonide
Physics Letters, 1966Abstract The superconducting transition temperature in quenced metallic indium antimonide depends on the treating pressure and temperature. It increases from 1.6°K to 5.1°K with increasing pressure and decreasing temperature. It is associated with the density of states of electrons.
S. Minomura +3 more
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Solid-State Electronics, 1961
The design, fabrication, and electrical characteristics of an n-p-n indium antimonide transistor which operates at 77°K are discussed. An analysis of the expected high-frequency performance is presented and a comparison made to a p-n-p germanium transistor.
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The design, fabrication, and electrical characteristics of an n-p-n indium antimonide transistor which operates at 77°K are discussed. An analysis of the expected high-frequency performance is presented and a comparison made to a p-n-p germanium transistor.
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The growth of antimonides by MOVPE
Progress in Crystal Growth and Characterization of Materials, 1997Abstract There are three main reasons for the study of antimonides, they are the optical [mainly infrared], electrical [mainly Insb; the Gasb/Inas heterojunction] and structural [mainly ordering and spinodal decomposition] properties. These properties, together with the various techniques used to measure them, are discussed in the context of several ...
A. Aardvark, N.J. Mason, P.J. Walker
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1999
Amorphous gallium antimonide (a-GaSb) does not have at the moment specific technological applications; consequently little research has been done as compared with its crystalline counterpart.
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Amorphous gallium antimonide (a-GaSb) does not have at the moment specific technological applications; consequently little research has been done as compared with its crystalline counterpart.
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Acta Physica Academiae Scientiarum Hungaricae, 1981
Semiconductor AIII−BV ternary and quaternary antimonides are useful materials for optoelectronic and microelectronic applications. Only a few members of possible combinations were prepared, mostly as epitaxial layers grown onto a binary or ternary AIII−BV compound.
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Semiconductor AIII−BV ternary and quaternary antimonides are useful materials for optoelectronic and microelectronic applications. Only a few members of possible combinations were prepared, mostly as epitaxial layers grown onto a binary or ternary AIII−BV compound.
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On the intermetallic compounds indium antimonide, gallium antimonide, and aluminum antimonide†)
Physica, 1954R.G. Breckenridge +5 more
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1999
Indium antimonide (InSb) has the smallest band gap of any of the III–V semiconductors (E o∼0.18 eV at 300 K, Ref. [1]). InSb is, thus, an interesting semiconductor for use in long-wavelength optoelectronic device applications. Its relatively high electron mobility (μn∼7×104 cm2/V-s at 300 K, Ref.
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Indium antimonide (InSb) has the smallest band gap of any of the III–V semiconductors (E o∼0.18 eV at 300 K, Ref. [1]). InSb is, thus, an interesting semiconductor for use in long-wavelength optoelectronic device applications. Its relatively high electron mobility (μn∼7×104 cm2/V-s at 300 K, Ref.
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