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Photoconductive Indium Antimonide Detectors
Applied Optics, 1965The manufacture of InSb photoconductive detectors is briefly described. A simplified design theory is given, followed by a description of typical performance between room temperature and 77°K. The practical embodiment of photocells is described, together with the design of arrays of detector elements.
F. D. Morten, R. E. J. King
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Piezoresistance of Cadmium Antimonide
physica status solidi (b), 1966AbstractA theoretical and experimental study is made of the piezoresistance of p‐ and n‐type CdSb. The stress applied along the three crystal axes produces a change in the resistivity of opposite sign. The proposed theory of nonequivalent valley Δ, Λ, and Σ, which follows from the low symmetry of the crystal, explains the observed effects in n‐type ...
K. D. Tovstyuk +3 more
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On the intermetallic compounds indium antimonide, gallium antimonide, and aluminum antimonide†)
Physica, 1954R.G. Breckenridge +5 more
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1999
Aluminum antimonide (AlSb) is a zinc-blende-type semiconductor with an indirect gap of ∼1.6 eV at room temperature [1]. AlSb is one of the less studied III–V compound semiconductors. This is due to its unfavorable chemical behavior and difficulties in bulk crystal growth. However, the interest in this material has considerably increased in recent years
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Aluminum antimonide (AlSb) is a zinc-blende-type semiconductor with an indirect gap of ∼1.6 eV at room temperature [1]. AlSb is one of the less studied III–V compound semiconductors. This is due to its unfavorable chemical behavior and difficulties in bulk crystal growth. However, the interest in this material has considerably increased in recent years
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Strain Effect in Polycrystalline Films of Indium Antimonide and Gallium Antimonide
1971Information is given on the technique of fabricating semiconducting films of indium antimonide and gallium antimonide having p-type and n-type conduction. Studies of the strain effect and of the temperature dependence of the resistance of prototype strain gauges are reported.
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IEEE Transactions on Electron Devices, 1963
C.M. Allen, P.R. Liegey, B. Salzberg
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C.M. Allen, P.R. Liegey, B. Salzberg
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