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Proceedings of the 53rd Annual Design Automation Conference, 2016
Spin-Transfer Torque Random Access Memory (STT-RAM) has been identified as an advantageous candidate for on-chip memory technology due to its high density and ultra low leakage power. Recent research progress in Magnetic Tunneling Junction (MTJ) devices has developed Multi-Level Cell (MLC) STT-RAM to further enhance cell density.
Xunchao Chen +7 more
openaire +2 more sources
Spin-Transfer Torque Random Access Memory (STT-RAM) has been identified as an advantageous candidate for on-chip memory technology due to its high density and ultra low leakage power. Recent research progress in Magnetic Tunneling Junction (MTJ) devices has developed Multi-Level Cell (MLC) STT-RAM to further enhance cell density.
Xunchao Chen +7 more
openaire +2 more sources