Results 221 to 230 of about 991,351 (253)

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

Floppy Mitral Valve/Mitral Valve Prolapse: Diagnosis and Clinical Classification in This Continuing Odyssey. [PDF]

Eur Cardiol
Boudoulas KD, Triposkiadis F, Marmagkiolis K, Iliescu C, Cilingiroglu M, Pitsis A, Stefanadis C, Boudoulas H.   +7 more
europepmc   +1 more source

Chemical State Detection and Charge Transfer in Complex Oxide Heterostructures via In Situ Auger Electron Spectroscopy

Advanced Functional Materials, EarlyView.
In situ Auger Electron Spectroscopy resolves oxidation states with high fidelity during the pulsed laser deposition of multivalent perovskite manganate and vanadate heterostructures. The chemical‐state signature is carried by the valence‐electron population of the transition‐metal cation, read out through the relative intensities of Auger fine ...
Harish Kumarasubramanian, Jayakanth Ravichandran   +1 more
wiley   +1 more source

Enhancing formation breakdown pressure using optimized drilling fluid additives with preventive wellbore strengthening approach. [PDF]

Sci Rep
Abdshahi A, Farnia Shalmani A, Mirabbasi SM, Ameri MJ, Nasiri A.   +4 more
europepmc   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source

Double trouble in device infection: Concomitant transvenous and leadless pacemaker infection. [PDF]

HeartRhythm Case Rep
Phan J, Al Solaia N, Aydin A, Alkadri J, Golian M.   +4 more
europepmc   +1 more source

Flunarizine prevents demyelination and neurological deficits in a cuprizone-induced mouse model of multiple sclerosis. [PDF]

Indian J Pharmacol
Venu G, Raj SSB.
europepmc   +1 more source

Balancing consistency and flexibility: exploring trait and state optimism in rats using the cognitive judgement bias test. [PDF]

Front Vet Sci
Bierbaum L, Mainzer RA, Mundinger C, Kaiser S, Richter SH.   +4 more
europepmc   +1 more source

Learning pathway determines motor organization and long-term retention of tool use in hornbills. [PDF]

iScience
Garcia-Pelegrin E.
europepmc   +1 more source

The Subtle Crisis: Public Domain Genomes and the Ethics of Translational Infrastructure. [PDF]

Ethics Hum Res
LoTempio JE.
europepmc   +1 more source