Results 101 to 110 of about 59,248 (322)

Smarter Sensors Through Machine Learning: Historical Insights and Emerging Trends across Sensor Technologies

open access: yesAdvanced Functional Materials, EarlyView.
This review highlights how machine learning (ML) algorithms are employed to enhance sensor performance, focusing on gas and physical sensors such as haptic and strain devices. By addressing current bottlenecks and enabling simultaneous improvement of multiple metrics, these approaches pave the way toward next‐generation, real‐world sensor applications.
Kichul Lee   +17 more
wiley   +1 more source

Synergistic Compatibilization of CsPbBr3 Perovskites and HfO2 Nanocrystals for Hybrid Sensitized Nanoscintillators

open access: yesAdvanced Functional Materials, EarlyView.
Lead halide perovskite nanocrystals are promising scintillators but suffer from reabsorption losses and limited compatibility with high‐Z additives. Hybridization of CsPbBr3 nanocrystals with PbBr2‐passivated HfO2 nanoparticle sensitizers, achieved during or after synthesis, produces stable composites with maintained optical quality, improved ...
Francesco Bruni   +17 more
wiley   +1 more source

Quantum‐Grade Nanodiamonds from a Single‐Step, Industrial‐Scale Pressure and Temperature Process

open access: yesAdvanced Functional Materials, EarlyView.
Novel method for creation of nitrogen‐vacancy centers in 50‐nm nanodiamonds based on high‐temperature plastic deformation is demonstrated. Compared to the electron irradiation approach, it yields nitrogen‐vacancy centers with significantly improved charge stability, T1 relaxation time, and optical Rabi contrast.
Yahua Bao   +17 more
wiley   +1 more source

Single‐Crystalline Lateral p‐SnS/n‐SnSe van der Waals Heterostructures by Vapor Transport Growth with In Situ Bi Doping

open access: yesAdvanced Functional Materials, EarlyView.
In‐situ doping during growth of SnSe and subsequent attachment of SnS produces high‐quality lateral pn‐heterojunctions between van der Waals semiconductors. Electron beam induced current measurements demonstrate electrically active pn‐junctions, paving the way for devices that harness charge separation at lateral interfaces in layered heterostructures.
Peter Sutter   +4 more
wiley   +1 more source

Contact Lens with Moiré Patterns for High‐Precision Eye Tracking

open access: yesAdvanced Functional Materials, EarlyView.
This work presents a passive contact lens for high‐precision eye tracking, integrating a microscopic moiré grating label. The parallax‐induced shift of macroscopic moiré patterns enables angle measurement with 0.28° precision using a standard camera under ambient light.
Ilia M. Fradkin   +11 more
wiley   +1 more source

Algorithmic Techniques for GPU Scheduling: A Comprehensive Survey

open access: yesAlgorithms
In this survey, we provide a comprehensive classification of GPU task scheduling approaches, categorized by their underlying algorithmic techniques and evaluation metrics.
Robert Chab, Fei Li, Sanjeev Setia
doaj   +1 more source

Designing Asymmetric Memristive Behavior in Proton Mixed Conductors for Neuromorphic Applications

open access: yesAdvanced Functional Materials, EarlyView.
Protonic devices that couple ionic and electronic transport are demonstrated as bioinspired neuromorphic elements. The devices exhibit rubber‐like asymmetric memristive behavior with slow voltage‐driven conductance increase and rapid relaxation, enabling simplified read–write operation.
Nada H. A. Besisa   +6 more
wiley   +1 more source

Conductance‐Dependent Photoresponse in a Dynamic SrTiO3 Memristor for Biorealistic Computing

open access: yesAdvanced Functional Materials, EarlyView.
A nanoscale SrTiO3 memristor is shown to exhibit dynamic synaptic behavior through the interaction of local electrical and global optical signals. Its photoresponse depends quantitatively on the conductance state, which evolves and decays over tunable timescales, enabling ultralow‐power, biorealistic learning mechanisms for advanced in‐memory and ...
Christoph Weilenmann   +8 more
wiley   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

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