Results 151 to 160 of about 396,120 (300)

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Principles of Applied Mathematics [PDF]

open access: yes, 2006
Introduction to fundamental concepts in "continuous" applied mathematics. Extensive use of demonstrational software. Discussion of computational and modelling issues.
Bazant, Martin Z.
core  

Washback Effect of University Entrance exams in Applied Mathematics to Social Sciences. [PDF]

open access: yesPLoS One, 2016
Rodríguez-Muñiz LJ   +3 more
europepmc   +1 more source

Three‐Dimensional Anomalous Hall Sensing Enabled By Spin–Orbit Torque Driven Domain Reconfiguration In Chiral Multilayers

open access: yesAdvanced Functional Materials, EarlyView.
A three‐dimensional magnetic field sensor is realized in chiral W/CoFeB/MgO multilayers, where spin–orbit torques reversibly reconfigure homochiral stripe domains. The symmetry of the torque enables offset‐free in‐plane sensing, while the reproducible domain reconfiguration extends the linear out‐of‐plane range. An anomalous Hall readout delivers large‐
Sabri Koraltan   +16 more
wiley   +1 more source

Operations research techniques applied to mine production planning [PDF]

open access: yes, 1974
vi, 146 leaves : ill. ; 25 cm.Thesis (Ph.D.) -- University of Adelaide, Dept.
Posaner, Franz Michel
core  

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand   +13 more
wiley   +1 more source

Applied mathematics [PDF]

open access: yesBulletin of the American Mathematical Society, 1950
openaire   +3 more sources

Applied mathematics [PDF]

open access: yesBulletin of the American Mathematical Society, 1943
  +5 more sources

Electrode and Microstructure Dependence of Oxygen Diffusion in Ferroelectric Hafnium Zirconium Oxide Thin Films

open access: yesAdvanced Functional Materials, EarlyView.
Significant nanoscale oxygen diffusion coefficient variations are measured in ferroelectric hafnium zirconium oxide films with grain boundaries and electrode interfaces exhibiting values 104 times larger than the grain cores. Overall coefficients are 10X larger for films prepared with metal nitride electrodes compared to refractory metals. New insights
Liron Shvilberg   +6 more
wiley   +1 more source

Electrocapillary Modulated Interfacial Tension Amplifies Liquid Metal Transduction

open access: yesAdvanced Functional Materials, EarlyView.
This study presented an electrocapillary‐enhanced magnetohydrodynamic pumping strategy that harnesses the Lorentz force and interfacial tension modulation of liquid metal droplets to achieve amplified fluidic power. The system enabled low‐voltage, self‐oscillating fluidic transduction with enhanced pressure and flow generation, supporting compact ...
Saba Firouznia   +3 more
wiley   +1 more source

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