Results 131 to 140 of about 4,524 (286)

Counterion Dependent Side‐Chain Relaxation Stiffens a Chemically Doped Thienothiophene Copolymer

Advanced Functional Materials, EarlyView.
Oxidation of a thienothiophene copolymer, p(g3TT‐T2), via different doping strategies and dopant molecules resulted in materials with similar oxidation levels and a high electrical conductivity of ≈100 S cm−1. However, mechanical properties varied significantly, with sub‐glass transition temperatures and elastic moduli spanning from –44°C to –3°C and ...
Mariavittoria Craighero, Meghna Jha, Elsa Veronica Flores‐Vela, Joost Kimpel, Andreas Schaefer, Jiali Guo, Jesika Asatryan, Alberto Peinador Veiga, Shuichi Haraguchi, Per‐Anders Carlsson, Jaime Martín, Mariano Campoy‐Quiles, Christian Müller   +12 more
wiley   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

Advanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu, Haksoon Jung, Yongwoo Lee, Hoichang Jeong, Yanfeng Zhao, Heesoo Yang, Minho Park, Hyeonjin Lee, Seunghun Baek, Minju Song, Junghwan Kim, Youngmin Jo, Hyunjin Park, Munhyeon Kim, Jae‐Joon Kim, Kyuho Jason Lee, Byungjo Kim, Jimin Kwon   +17 more
wiley   +1 more source

Titanium Suboxides Responsible for Electronic Anomaly Near Room Temperature in the Ti3C2Tx MXene

Advanced Functional Materials, EarlyView.
Our multi‐technique study reveals that the near‐room‐temperature anomaly in Ti3C2Tx MXene is linked to titanium suboxide nanodomains, including Ti3O5, embedded within the MXene host. Their temperature‐driven transformation provides an alternative explanation to solvent‐ and swelling‐based models and offers new insight into the thermally activated ...
Bence G. Márkus, Bradlee J. McIntosh, Lili Vajtai, Anna Nyáry, Sándor H. Sipos, Nirmal J. Ghimire, Ferenc Simon, László Forró, Dávid Beke   +8 more
wiley   +1 more source

Comprehensive Analysis of Input Order Invariant Approximate 4-2 Compressors for Binary Multipliers

Approximate arithmetic circuits sacrifice computing accuracy in exchange for improvements in power, area, and speed. Many approximate binary multipliers that use 4-2 compressors have been proposed but most of the proposals have error performances that ...
Di Meo, Gennaro, E. Napoli, Strollo, Antonio G. M., E. Zacharelos, Zacharelos, Efstratios, Napoli, Ettore, A. G. M. Strollo, G. Di Meo   +7 more
core   +1 more source

Thermally Pre‐Formed Reconfigurable Resistive Random‐Access Memory Crossbar Arrays: A Dual‐Mode Platform for Robust Physically Unclonable Functions and In‐Memory Computing

Advanced Functional Materials, EarlyView.
A reconfigurable RRAM platform utilizing thermally pre‐formed filaments (TPFs) is developed to realize robust hardware security. By exploiting the thermodynamic stochasticity of TPFs, exceptionally reliable physically unclonable functions (PUFs) are achieved.
Seongbin Kwon, Taewon Lee, Dohyeong Kim, Sungmin Hwang, Sungjoon Kim   +4 more
wiley   +1 more source

Performance Evaluation of Approximate (8; 2) Compressor for Multipliers in Error-Resilient Image Processing Applications

Approximate computing improves performance in error-resilient applications like image and video processing. Multipliers are part of its computing unit, which frequently requires a large number of resources.
Rao, Dr. K. Babu, Z. Naga Sivareddy, P., Aravind   +2 more
core   +1 more source

All‐Solution‐Processed HgTe Quantum Dot Photodetectors for Extended Short‐Wavelength Infrared Range Enhanced by Plasmonic ITO Nanocrystals

Advanced Functional Materials, EarlyView.
All‐solution‐processed, low‐cost extended short‐wavelength infrared photodetectors are realized by coupling colloidal HgTe quantum dots to plasmonic In2O3:Sn,F nanocrystals. Localized surface plasmon resonances boost and spectrally tailor light absorption between 1500 and 3000 nm, enabling responsivities above 40 A W−1.
Kseniia A. Sergeeva, Anastasiia V. Sokolova, Chenxi Guo, Yuanfei Huo, Yulia V. Kuznetsova, Ran An, Aleksandr A. Sergeev, Kam Sing Wong, Tianshuo Zhao, Andrey L. Rogach   +9 more
wiley   +1 more source

Redirecting Nano‐Silicon Agglomeration: Dual‐Carbon Design Triggers Self‐Adaptive Nanoporous Si Sponge for Enhanced Lithium Storage

Advanced Functional Materials, EarlyView.
This study addresses silicon anode degradation using an engineered nSi/Gr/C dual‐carbon matrix. By restricting SEI infiltration, the architecture redirects silicon agglomeration into a beneficial structural self‐adaptive activation. During cycling, silicon nanoparticles self‐organize into a resilient nanoporous sponge. This dynamic network accommodates
Wei Zhang, Yuxia Zhong, Wen Ren, Lei Zhang, Yexin Pan, Mitch Guijun Li, Gary J. Cheng, Ruohan Yu   +7 more
wiley   +1 more source