Results 171 to 180 of about 194,210 (329)
Advanced Science, EarlyView.A novel optical thermometer exploits the rare UV emission of Yb2+ ions in a SrB4O7 host, enabling highly sensitive, non‐contact temperature measurements from 80 to 420 K. The applied multiple linear regression (MLR) analysis results in a multiple increase in the resulting temperature sensitivity.
Fang Zhao +6 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.This paper reviews the physics of liquid metals in RF devices, including the influence of mechanical strain on resonance as well as fabrication methods and strategies for designing tunable and strain‐tolerant inductors, capacitors, and antennas.
Md Saifur Rahman, William J. Scheideler
wiley +1 more source
Numerical approximations of Sturm–Liouville eigenvalues using Chebyshev polynomial expansions method [PDF]
, 2015 Uğur Yücel
openalex +1 more source
Advanced Electronic Materials, EarlyView.Ising machines are emerging as specialized hardware solvers for computationally hard optimization problems. This review examines five major platforms—digital CMOS, analog CMOS, emerging devices, coherent optics, and quantum systems—highlighting physics‐rooted advantages and shared bottlenecks in scalability and connectivity.
Hyunjun Lee, Joon Pyo Kim, Sanghyeon Kim
wiley +1 more source
On approximate roots of a polynomial.
Journal für die reine und angewandte Mathematik (Crelles Journal), 1975 openaire +1 more source
Divergence of Approximating Polynomials [PDF]
Proceedings of the American Mathematical Society, 1963 openaire +1 more source
Low‐Power Control Of Resistance Switching Transitions in First‐Order Memristors
Advanced Electronic Materials, EarlyView.Joule losses are a serious concern in modern integrated circuit design. In this regard, minimizing the energy necessary for programming memristors should be handled with care. This manuscript presents an optimal control framework, allowing to derive energy‐efficient programming voltage protocols for resistance switching devices. Following this approach,
Valeriy A. Slipko +3 more
wiley +1 more source
Uranium Doped Gallium Nitride Epitaxial Thin Films
Advanced Electronic Materials, EarlyView.Uranium was controllably added to gallium nitride using molecular beam epitaxy. The uranium atoms segregated into vertically oriented regions with higher doping levels. Concentrations up to a few percent were achieved without showing significant degradation in the crystalline quality or optical characteristics. Low electrical resistivity was maintained
J. Pierce Fix +10 more
wiley +1 more source
Modeling and analysis of fascioliasis disease with Katugampola fractional derivative: a memory-incorporated epidemiological approach. [PDF]
Sci RepPandey RK, Nisar KS.
europepmc +1 more source