Results 221 to 230 of about 148,259 (301)

Twisted MoS2 Bilayers as Functional Elements in Memtransistors: Hysteresis, Optical Signatures, and Photocurrent Kinetics

Advanced Electronic Materials, EarlyView.
ABSTRACT Layered 2D materials are considered as promising for memristive applications due to their ultimate vertical scalability compared to conventional semiconductor films and pronounced hysteresis properties. Bias‐resolved Raman and Photoluminescence mapping is used to quantify strain from phonon shifts and carrier density from the exciton‐trion ...
Vladislav Kurtash, Ilya Eliseyev, Valery Davydov, Heiko O. Jacobs, Jörg Pezoldt   +4 more
wiley   +1 more source

Monolithic Co‐Integration of Vertical FET and Memristor for 1T1R Cell

Advanced Electronic Materials, EarlyView.
This work demonstrates a vertically integrated one‐transistor–one‐memristor (1T1R) cell by stacking a MoS2 vertical field‐effect transistor (VFET) with a mortise–tenon‐shaped (MTS) memristor. This compact architecture not only exhibits highly uniform resistive switching characteristics but also provides a strategy for constructing densely packed ...
Fubo Jiao, Weiqi Dang, Gong‐Jie Ruan, Jiameng Sun, Xiaoyu Sun, Dehe Kong, Yinzhi Huang, Yuxuan Yuan, Qin Liu, Sicheng Chen, Long Zhao, Cong Wang, Pengfei Wang, Chen Pan, Yajun Fu, Shi‐Jun Liang   +15 more
wiley   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

Capacitive versus Faradaic Microelectrodes for Extracellular Stimulation: A Fully Coupled FEM–Hodgkin–Huxley Study of Thresholds and Current Redistribution

Advanced Electronic Materials, EarlyView.
A fully coupled FEM–HH model shows that ideally capacitive microelectrodes can achieve lower charge‐density thresholds than Faradaic contacts under current‐controlled stimulation. The advantage stems from the dynamics of surface current density on capacitive interfaces, which redirects current beneath adherent neurons.
Aleksandar Opančar, Eric Daniel Głowacki, Vedran Đerek   +2 more
wiley   +1 more source

Stretchable Energy Storage with Eutectic Gallium Indium Alloy

Advanced Energy Materials, Volume 15, Issue 11, March 18, 2025.
A highly stretchable liquid metal‐based electrode is developed via a one‐step process, retaining conductivity and capacitance after mechanical deformation up to 900% strain. The stretchable all‐solid‐state device provides a areal energy density of 43 µWh cm⁻2 after 150% strain.
Adit Gupta, Noah Al‐Shamery, Jian Lv, Gurunathan Thangavel, Jinwoo Park, Daniel Mandler, Pooi See Lee   +6 more
wiley   +1 more source

Runtime Monitoring of Static Fairness Properties

Henzinger TA, Karimi M, Kueffner K, Mallik K.   +3 more
europepmc   +1 more source

Integrating Automated Electrochemistry and High‐Throughput Characterization with Machine Learning to Explore Si─Ge─Sn Thin‐Film Lithium Battery Anodes

Advanced Energy Materials, Volume 15, Issue 11, March 18, 2025.
A closed‐loop, data‐driven approach facilitates the exploration of high‐performance Si─Ge─Sn alloys as promising fast‐charging battery anodes. Autonomous electrochemical experimentation using a scanning droplet cell is combined with real‐time optimization to efficiently navigate composition space.
Alexey Sanin, Jackson K. Flowers, Tobias H. Piotrowiak, Frederic Felsen, Leon Merker, Alfred Ludwig, Dominic Bresser, Helge Sören Stein   +7 more
wiley   +1 more source

Societal allostatic load under chronic threat: defensive dominance and collective efficacy (Iran as a case example). [PDF]

Front Behav Neurosci
Faraji J.
europepmc   +1 more source