Results 171 to 180 of about 2,551,510 (311)

The Artificial Intelligence Act: lights and shadows

open access: yes
The EU's AI Act represents a significant step in regulating artificial intelligence, both in terms of human centered and prudential approach. We intend to investigate three issues: 1) Could high risk activities and their control raise concerns about the ...
Giovanna De Minico
core  

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

open access: yesAdvanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone   +11 more
wiley   +1 more source

Hybrid transformer-CNN model for accurate prediction of peptide hemolytic potential

open access: yesScientific Reports
Hemolysis is a crucial factor in various biomedical and pharmaceutical contexts, driving our interest in developing advanced computational techniques for precise prediction.
Sultan Almotairi   +4 more
doaj   +1 more source

Federated Foundation Models on Heterogeneous Time Series

open access: yes
Training a general-purpose time series foundation models with robust generalization capabilities across diverse applications from scratch is still an open challenge.
Jiang, Jing   +7 more
core   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand   +13 more
wiley   +1 more source

Advances in Sustainable and Wearable Textile Based Soft Robotics

open access: yesAdvanced Functional Materials, EarlyView.
This Review examines advances in wearable textile‐based soft robotics, focusing on sustainable materials, integrated sensing, and scalable actuation. It discusses manufacturing and system integration across healthcare, assistive robotics, prosthetics, and human–machine interfaces, and highlights key challenges in circular design, including life‐cycle ...
Zahir Abbas   +6 more
wiley   +1 more source

Artificial Intelligence

open access: yes, 2012
This saylor course introduces the field of artificial intelligence (AI). Materials on AI programming,logic,search,game playing,machine learning,natural language understanding and robotics introduce the student to AI methods and techniques,their ...
The Saylor Foundation
core  

Artificial Intelligence for Future Presidents: Teaching AI Literacy to Everyone

open access: yes
The rapid and nearly pervasive impact of artificial intelligence on fields as diverse as medicine, law, banking, and the arts has made many students who would never enroll in a computer science class become interested in understanding elements of ...
Georgiou, Nicholas C.   +5 more
core   +1 more source

Monolithic Oxidation Enables Ultrathin Vertically Graded Tantalum Oxide for Low‐Voltage, Low‐Variability Memristive Switching

open access: yesAdvanced Functional Materials, EarlyView.
Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang   +11 more
wiley   +1 more source

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