Research on Resistive Switching Mechanism of SnO2/SnS2 Based Heterojunction Memory Devices
This work fabricates SnO2/SnS2 RRAM using (NH4)4Sn2S6, achieving 224 pJ set energy at 0.4 V with >1000‐cycle stability and 4 × 104 s retention. XPS/SEM/AFM‐validated interfacial engineering enables uniform switching, advancing low‐power neuromorphic memory development.
WenBin Liu +4 more
wiley +1 more source
Ion Gel-Modulated Low-Temperature Field-Effect Phototransistors with Multispectral Responsivity for Artificial Synapses. [PDF]
Zhao J, Zhang Y, Guo D, Zhai J.
europepmc +1 more source
Temperature-resilient solid-state organic artificial synapses for neuromorphic computing. [PDF]
Melianas A +10 more
europepmc +1 more source
Hardware Implementation of Artificial Synapses
openaire +1 more source
Neural Information Processing and Time‐Series Prediction with Only Two Dynamical Memristors
The present study demonstrates how simple circuits with only two memristive devices are utilized to perform high complexity temporal information processing tasks, like neural spike detection in noisy environment, or time‐series prediction. This circuit simplicity is enabled by the dynamical complexity of the memristive devices, i.e.
Dániel Molnár +12 more
wiley +1 more source
Insights of BDAPbI4-Based Flexible Memristor for Artificial Synapses and In-Memory Computing. [PDF]
Patel M +4 more
europepmc +1 more source
Neuromorphic Motor Control with Electrolyte‐Gated Organic Synaptic Transistors
Electrolyte‐gated organic synaptic transistor (EGOST)‐based neuromorphic motor control systems integrate sensing, processing, and actuation by mimicking biological synapses. With advantages such as low power consumption, tunable synaptic plasticity, and mechanical flexibility, they are emerging as next‐generation core technologies for real‐time ...
Sung‐Hwan Kim +3 more
wiley +1 more source
Scalable Microscale Artificial Synapses of Lead Halide Perovskite with Femtojoule Energy Consumption. [PDF]
de Boer JJ, Ehrler B.
europepmc +1 more source
This review surveys oxide‐semiconductor devices for in‐memory and neuromorphic computing, highlighting recent progress and remaining challenges in charge‐trap, ferroelectric, and two‐transistor devices. Oxide semiconductors, featuring ultra‐low leakage, low‐temperature processing, and back‐end‐of‐line compatibility, are explored for analog in‐memory ...
Suwon Seong +4 more
wiley +1 more source
Editorial: Structure and function of the immunological and redirecting artificial synapses and their clinical implications. [PDF]
Izquierdo M +3 more
europepmc +1 more source

