Results 141 to 150 of about 1,649,451 (289)

Interfacial Adsorption Engineering Enables a Highly Utilized Zinc Anode With 99.9% Coulombic Efficiency

Advanced Functional Materials, EarlyView.
When hydrated zinc ions are deposited onto Cu substrates at practical current densities, the modified Cu enables simultaneously compact zinc growth and suppressed hydrogen evolution. This regulatory effect originates from the superior adsorption of the modified Cu interface, which enhances zincophilicity and the hydrogen desorption barrier, thereby ...
Zhe Zhu, Xiaoqiao Liao, Yihao Long, Mengmeng Yang, Ibrahem O. Baibars, Ruiqi Song, Zhun Shi, Liang He, Chuan Zhao   +8 more
wiley   +1 more source

Moving Beyond Oligoethers: Polar Side‐Chain Engineering for Aqueous Mixed Ionic–Electronic Conductors

Advanced Functional Materials, EarlyView.
We investigate how side‐chain chemistry and hydrogen bonding affect electrochemical doping in poly(propylenedioxythiophene) polymers. Replacing oligoether side chains with hydroxyl or carboxylic acid groups nearly triples electrochemical conductivity.
Joshua M. Rinehart, Anna M. Österholm, James F. Ponder Jr., Lucas Q. Flagg, Lee J. Richter, John R. Reynolds   +5 more
wiley   +1 more source

Paraneoplastic Brachial Amyotrophic Diplegia and Encephalitis With Ma2-IgG During Immune Checkpoint Inhibitor Use for Mesothelioma: A Case Report. [PDF]

JTO Clin Res Rep
Uysal SP, Badihian S, Toljan K, Andrapalliyal N, Stevenson J, Lee J, Kunchok A.   +6 more
europepmc   +1 more source

Integrated Field‐Free SOT Domain‐Wall Synapses and MTJ Stochastic Neurons for Hardware Boltzmann Machines

Advanced Functional Materials, EarlyView.
Field‐free spin‐orbit torque domain‐wall synapses integrated with stochastic MTJ neurons enable compact hardware Boltzmann machines. Leveraging intrinsic stochasticity and multi‐level conductance, the system achieves efficient probabilistic learning with high accuracy, demonstrating a scalable spintronic platform for energy‐efficient edge AI.
Aijaz H. Lone, Meng Tang, Camelia Florica, Bin He, Jingkai Xu, Selma Amara, Georgian Melinte, Xixiang Zhang, Gianluca Setti   +8 more
wiley   +1 more source

Hybrid physics-machine learning models for quantitative electron diffraction refinements. [PDF]

Nat Commun
Malik SA, Doherty TAS, Colmey B, Roberts SJ, Gal Y, Midgley PA.   +5 more
europepmc   +1 more source

Dual‐Salt Carbothermal Shock Strategy Enabling Ultrafast and Sustainable Regeneration of Spent LiFePO4 Cathode Materials

Advanced Functional Materials, EarlyView.
Lithium iron phosphate (LFP) accounts for over 50% of the global cathode market, underscoring the need for efficient recycling and regeneration. We propose a dual‐salt carbothermal shock (CTS) strategy using LiI and NaI to in situ repair Li vacancies.
Yanjuan Li, Zhongou Yang, Junhui Cai, Yiran Li, Zhenzhen Wu, Zhouyang Long, Xiao Yan, Shanqing Zhang   +7 more
wiley   +1 more source

Decoupling Size from Shape: Cellular Sheaf Laplacians as Ligand Geometry Descriptors for Binding Affinity Prediction. [PDF]

Int J Mol Sci
Akgüller Ö, Balcı MA, Cioca G.
europepmc   +1 more source

Binder Engineering Suppresses Jahn–Teller‐Driven Mn Dissolution and Enables High‐Loading MnO2 Cathodes for Aqueous Zn‐Ion Batteries

Advanced Functional Materials, EarlyView.
A Zn2+‐coordinated poly(vinylidene fluoride) binder is shown to suppress Jahn–Teller‐driven Mn dissolution while improving dispersion, wettability, and structural integrity in thick MnO2 cathodes. This simple binder‐engineering strategy enables high‐loading aqueous Zn‐ion batteries with enhanced areal capacity, cycling stability, and practical promise ...
Insung Jang, Geun Yoo, Geon−Hyoung An
wiley   +1 more source

Asymmetric canonical correlation analysis of Riemannian and high-dimensional data. [PDF]

Electron J Stat
Buenfil J, Lila E.
europepmc   +1 more source

Dual‐Inductive and Programmable Switching: A New Paradigm in Ionic Interface‐Controlled Perovskite Memory

Advanced Functional Materials, EarlyView.
A fully programmable, dual‐inductive switchable halide perovskite memristor is demonstrated through precise BDAI2‐mediated interface engineering. This ion‐modulating layer suppresses stochastic filamentary growth, enabling stable, non‐filamentary switching via dynamic barrier modulation.
So‐Yeon Kim, Juan Bisquert
wiley   +1 more source